InAs/GaAs quantum dot (QD) lasers were grown on silicon substrates using a thin Ge buffer and three-step growth method in the molecular beam epitaxy (MBE) system. In addition, strained superlattices were used to prevent threading dislocations from propagating to the active region of the laser. The as-grown material quality was characterized by the transmission electron microscope, scanning electron microscope, X-ray diffraction, atomic force microscope, and photoluminescence spectroscopy. The results show that a high-quality GaAs buffer with few dislocations was obtained by the growth scheme we developed. A broad-area edge-emitting laser was also fabricated. The O-band laser exhibited a threshold current density of 540 A/cm² at room temperature under continuous wave conditions. This work demonstrates the potential of large-scale and low-cost manufacturing of the O-band InAs/GaAs quantum dot lasers on silicon substrates.

中文翻译：

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用于 O 波段激光器的硅外延生长 InAs/GaAs 量子点材料的研究

InAs/GaAs 量子点 (QD) 激光器在分子束外延 (MBE) 系统中使用薄 Ge 缓冲层和三步生长法在硅基板上生长。此外，应变超晶格用于防止螺纹位错传播到激光器的活性区域。通过透射电子显微镜、扫描电子显微镜、X射线衍射、原子力显微镜和光致发光光谱表征了生长材料的质量。结果表明，通过我们开发的生长方案获得了具有少量位错的高质量 GaAs 缓冲器。还制造了大面积边缘发射激光器。O 波段激光器的阈值电流密度为 540 A/cm ²在连续波条件下的室温下。这项工作展示了在硅基板上大规模和低成本制造 O 波段 InAs/GaAs 量子点激光器的潜力。