In this work, based on physical vapor deposition and high-temperature annealing (HTA), the 4-inch crack-free high-quality AlN template is initialized. Benefiting from the crystal recrystallization during the HTA process, the FWHMs of X-ray rocking curves for (002) and (102) planes are encouragingly decreased to 62 and 282 arcsec, respectively. On such an AlN template, an ultra-thin AlN with a thickness of ~700 nm grown by MOCVD shows good quality, thus avoiding the epitaxial lateral overgrowth (ELOG) process in which 3–4 μm AlN is essential to obtain the flat surface and high crystalline quality. The 4-inch scaled wafer provides an avenue to match UVC-LED with the fabrication process of traditional GaN-based blue LED, therefore significantly improving yields and decreasing cost.

中文翻译：

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通过 MOCVD 在高温退火 AlN 模板上生长的 4 英寸高质量无裂纹 AlN 层

在这项工作中，基于物理气相沉积和高温退火 (HTA)，对 4 英寸无裂纹高质量 AlN 模板进行了初始化。受益于 HTA 过程中的晶体再结晶，(002) 和 (102) 面的 X 射线摇摆曲线的 FWHM 分别令人鼓舞地降低到 62 和 282 弧秒。在这样的 AlN 模板上，通过 MOCVD 生长的厚度约为 700 nm 的超薄 AlN 显示出良好的质量，从而避免了外延横向过度生长 (ELOG) 工艺，其中 3-4μm AlN 是获得平坦表面和高结晶质量所必需的。4 英寸尺寸的晶圆为 UVC-LED 与传统 GaN 基蓝色 LED 的制造工艺相匹配提供了途径，从而显着提高了产量并降低了成本。