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Degradation of API pollutants using hydrodynamic cavitation and process intensification
Chemical Engineering and Processing: Process Intensification ( IF 3.8 ) Pub Date : 2022-01-17 , DOI: 10.1016/j.cep.2022.108799
Divya Dixit 1, 2 , Pooja Thanekar 1 , Vinay M. Bhandari 1, 2
Affiliation  

Degradation of Naproxen, a common nonsteroidal anti-inflammatory drug as a model compound, has been reported using hydrodynamic cavitation (HC) and process intensification. Two types of cavitating devices, vortex diode that employs vortex flow and a conventional linear flow based device, orifice have been investigated for their effectiveness in degradation. Process intensification was carried out by employing simple aeration and also by addition of oxidising agent, hydrogen peroxide (H2O2). Vortex diode required significantly lower pressure drop (1.5 bar) compared to the orifice (5 bar). A high extent of degradation, 67%, was possible using the process intensification; representing a very high enhancement, to an extent of more than 200%, by combining HC+H2O2. The degradation of naproxen progresses via intermediates formation and intermediates also eventually get gradually degraded. The kinetics of degradation was evaluated using per pass degradation model and for the different approaches, confirming higher per-pass degradation in the vortex diode and for the process intensification. The cavitational yield in HC+H2O2+aeration using vortex diode (23.4 × 10−5 mg/J) was ∼ 5 times greater than that for orifice (4.5 × 10−5 mg/J). The present study clearly highlights utility of process intensification approach for the degradation of active pharmaceutical ingredients (API) pollutants for increased efficacy.



中文翻译:

使用流体动力空化和过程强化降解 API 污染物

据报道,使用流体动力空化 (HC) 和过程强化可降解萘普生(一种常见的非甾体抗炎药作为模型化合物)。已经研究了两种类型的空化装置,即采用涡流的涡流二极管和传统的基于线性流动的装置,孔板在退化方面的有效性。通过使用简单的曝气以及添加氧化剂过氧化氢(H 2 O 2)来进行工艺强化。与孔板 (5 bar) 相比,涡流二极管所需的压降 (1.5 bar) 显着降低。使用过程强化可以实现 67% 的高度降解;通过组合 HC+H 2 O表示非常高的增强,达到超过 200% 的程度2 . 萘普生的降解通过中间体的形成进行,中间体也最终逐渐降解。使用单程退化模型和不同方法评估退化动力学,证实了涡流二极管中更高的单程退化和工艺强化。使用涡流二极管(23.4 × 10 -5 mg/J)在HC+H 2 O 2 +曝气中的空化产率是孔板(4.5 × 10 -5 mg/J) 的~5倍 。本研究清楚地强调了工艺强化方法在降解活性药物成分 (API) 污染物以提高疗效方面的效用。

更新日期:2022-01-20
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