In this work, ultrawide bandgap ɛ-Ga₂O₃/h-BCN heterojunctions were epitaxially grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). This heterojunction was systematically studied by various material characterization techniques, including X-ray diffraction (XRD), atomic force microscope (AFM), transmission electron microscopy (TEM), high-resolution X-ray photoelectron spectroscopy (HR-XPS), energy dispersive spectroscopy (EDS), and UV–Vis-NIR spectroscopy. h-BCN conformed to a two-dimensional layered structure, while ɛ-Ga₂O₃ grown on h-BCN was found to be polycrystalline. TEM and EDS element mapping showed a clear and sharp interface of the heterojunction. HR-XPS measurements were carried out to unveil the band alignment of the ε-Ga₂O₃/h-BCN heterojunction. It was found that the ε-Ga₂O₃/h-BCN heterojunction exhibits a type-II band alignment with a conduction band offset of 2.77 eV and a valence band offset of − 1.60 eV. This work provides valuable information on the epitaxial growth and band alignment of the ultrawide bandgap ɛ-Ga₂O₃/h-BCN heterojunctions, opening the door to a myriad of electronic and photonic applications.

在这项工作中，超宽带隙 ɛ-Ga ₂ O ₃ /h-BCN 异质结通过金属有机化学气相沉积 (MOCVD) 在蓝宝石衬底上外延生长。通过各种材料表征技术系统地研究了这种异质结，包括 X 射线衍射 (XRD)、原子力显微镜 (AFM)、透射电子显微镜 (TEM)、高分辨率 X 射线光电子能谱 (HR-XPS)、能量色散光谱（EDS）和紫外-可见-近红外光谱。h-BCN 符合二维层状结构，而 ɛ-Ga ₂ O ₃发现在 h-BCN 上生长是多晶的。TEM 和 EDS 元素映射显示了异质结的清晰和锐利的界面。进行 HR-XPS 测量以揭示 ε-Ga ₂ O ₃ /h-BCN 异质结的能带排列。发现ε-Ga ₂ O ₃ /h-BCN异质结呈现II型能带排列，导带偏移为2.77 eV，价带偏移为-1.60 eV。_{这项工作为超宽带隙 ɛ-Ga 2} O ₃ /h-BCN 异质结的外延生长和能带排列提供了有价值的信息，为无数电子和光子应用打开了大门。