Thin epitaxial films of metals on insulating substrates are essential for many applications, as conducting layers, in magnetic devices or as templates for further growth. In this work, we report on the growth of epitaxial Ru films on single-crystalline Al${}_2$O${}_3$(0001) substrates by magnetron sputtering and their subsequent systematic characterization using Rutherford backscattering spectrometry of He ions both in random and in channeling conditions. We include results of a Ru(0001) single crystal for comparison. Analysis of channeling shows that films thicker than 35 nm grow with (0001) orientation, a well-defined epitaxial relation with the substrate and a high degree of crystal quality, comparable to the Ru(0001) single crystal. Thinner films of down to 7 nm in thickness, for which relaxation of epitaxial strain is not complete, produce a similar degree of dechanneling. The surface of the films can be prepared in a clean and ordered state in order to allow further epitaxial growth on top.

绝缘基板上的薄金属外延膜对于许多应用来说都是必不可少的，例如导电层、磁性器件或进一步生长的模板。在这项工作中，我们报告了在单晶铝上生长外延 Ru 薄膜${}_2$○${}_3$（0001）磁控溅射基板及其随后使用卢瑟福背散射光谱法对随机和通道条件下的氦离子进行系统表征。我们将 Ru(0001) 单晶的结果包括在内以进行比较。沟道分析表明，厚度大于 35 nm 的薄膜以 (0001) 取向生长，与衬底具有明确的外延关系和高度的晶体质量，可与 Ru(0001) 单晶相媲美。厚度低至 7 nm 的较薄薄膜，外延应变的松弛不完全，会产生类似程度的去通道。薄膜的表面可以制备成干净有序的状态，以允许在顶部进行进一步的外延生长。