In this work, optical emission spectroscopy and electrical measurements are implemented to investigate a reactive HiPIMS TiO₂ deposition process running at duty cycles lower than 16% and at a repetition rate of 1 kHz. Investigations focus on both the effect of the discharge pulse duration and the reactive gas (O₂) content in an Ar/O₂ gas mixture at fixed working pressures. It is shown that a competition occurs between the pulse duration and the target poisoning, the latter being favored with short pulse duration although the mean power is kept constant. An unusual hysteresis shape observed between the two sputtering modes is also discussed. From combined analyses of Ti emission line intensity, discharge current and deposited TiO₂ coating thickness, it is established that plasma diagnostics can be used effectively to control the deposition rate and to precisely manage the transition between metal and composite sputtering modes. Using these to calibrate a power feedback control loop could provide a better response compared to gas feedback control loop.

在这项工作中，实施光学发射光谱和电学测量以研究以低于 16% 的占空比和 1 kHz 重复率运行的反应性 HiPIMS TiO _{2沉积工艺。}研究集中于放电脉冲持续时间和固定工作压力下Ar/O _{2气体混合物中反应气体 (O 2} ) 含量的影响。结果表明，脉冲持续时间和目标中毒之间发生了竞争，尽管平均功率保持不变，但后者更倾向于短脉冲持续时间。还讨论了在两种溅射模式之间观察到的不寻常的滞后形状。来自 Ti 发射线强度、放电电流和沉积的 TiO _{2的综合分析}涂层厚度，确定等离子体诊断可以有效地用于控制沉积速率并精确管理金属和复合溅射模式之间的过渡。与气体反馈控制回路相比，使用这些校准功率反馈控制回路可以提供更好的响应。