The search for ultrathin and robust ferroelectrics leads to few promising two-dimensional (2D) materials. In₂Se₃ has drawn special attention owing to the existence of intercoupled in-plane (IP) and out-of-plane (OOP) ferroelectricity in monolayer form, which makes it a potential candidate for emerging artificial intelligence, information processing and memory applications. In addition, the high optical absorption and phase-dependent visible to infrared bandgap become advantageous from optoelectronics point-of-view. This unique ferroelectric and optoelectronic coupling further leads to explore atomic-scale multifunctional devices. In this review, we summarized the progress of non-volatile memory (NVM) and photodetector devices, and their intercoupled applications using 2D In₂Se₃. We expect that this review will provide an insight towards the promising future of 2D ferroelectric-(opto)electronics and motivate researchers for further development towards industrial scale.

中文翻译：

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硒化铟 (In2Se3) – 一种用于光电探测和非易失性存储器应用的新兴范德华材料

对超薄和坚固的铁电体的研究导致很少有有前途的二维 (2D) 材料。In ₂ Se ₃由于存在单层形式的相互耦合的平面内 (IP) 和平面外 (OOP) 铁电体而受到特别关注，这使其成为新兴人工智能、信息处理和存储应用的潜在候选者. 此外，从光电子学的角度来看，高光吸收和相位相关的可见光至红外带隙变得有利。这种独特的铁电和光电耦合进一步导致探索原子级多功能设备。在这篇综述中，我们总结了非易失性存储器 (NVM) 和光电探测器设备的进展，以及它们使用 2D In 的相互耦合应用。₂硒₃。我们希望这篇综述将为二维铁电（光）电子学的广阔前景提供见解，并激励研究人员进一步向工业规模发展。