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Carrier Injection and Manipulation of Charge-Density Wave in Kagome SuperconductorCsV3Sb5
Physical Review X ( IF 11.6 ) Pub Date : 2022-01-03 , DOI: 10.1103/physrevx.12.011001
Kosuke Nakayama , Yongkai Li , Takemi Kato , Min Liu , Zhiwei Wang , Takashi Takahashi , Yugui Yao , Takafumi Sato

Kagome metals AV3Sb5 (A=K, Rb, and Cs) exhibit a unique superconducting ground state coexisting with charge-density wave (CDW), whereas how these characteristics are affected by carrier doping remains unexplored because of the lack of an efficient carrier-doping method. Here we report successful electron doping to CsV3Sb5 by Cs dosing, as visualized by angle-resolved photoemission spectroscopy. We found that the electron doping with Cs dosing proceeds in an orbital-selective way, as characterized by a marked increase in electron filling of the Sb 5pz and V 3dxz/yz bands as opposed to the relatively insensitive nature of the V 3dxy/x2y2 bands. By monitoring the temperature evolution of the CDW gap around the M¯ point, we found that the CDW can be completely killed by Cs dosing while keeping the saddle point with the V 3dxy/x2y2 character almost pinned at the Fermi level. The present result suggests a crucial role of multiorbital effect to the occurrence of CDW and provides an important step toward manipulating the CDW and superconductivity in AV3Sb5.

中文翻译:

Kagome超导体CsV3Sb5中电荷密度波的载流子注入和操纵

可果美金属 一个35 (一个=、Rb 和 Cs) 表现出与电荷密度波 (CDW) 共存的独特超导基态,而由于缺乏有效的载流子掺杂方法,这些特性如何受载流子掺杂的影响仍未得到探索。在这里,我们报告了成功的电子掺杂电压35通过 Cs 剂量,如角度分辨光电发射光谱所显示的那样。我们发现 Cs 的电子掺杂以轨道选择性的方式进行,其特征是 Sb 的电子填充显着增加5pz 和 V 3dXz/z 与 V 相对不敏感的性质相反 3dX/X2-2乐队。通过监测周围的 CDW 间隙的温度演变¯ 点,我们发现 CDW 可以通过 Cs 剂量完全杀死,同时保持鞍点与 V 3dX/X2-2字符几乎固定在费米能级。目前的结果表明多轨道效应对 CDW 的发生起着至关重要的作用,并为操纵 CDW 和超导性提供了重要的一步。一个35.
更新日期:2022-01-03
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