Ferroelectric interfacial devices consist of materials systems whose interfacial electronic properties (such as a 2D electron gas or an interfacial magnetic spin configuration) are modulated by a ferroelectric layer set in its immediate vicinity. While the prototypical example of such a system is the ferroelectric field effect transistor first proposed in the 1950s, only with the recent advances in the controlled growth of epitaxial thin films and heterostructures, and the recent physical understanding down to the atomic scale of screening processes at ferroelectric-semiconducting and -metallic interfaces made possible by first principles calculations, have the conditions been met for a full development of the field. In this review, we discuss the recent advances in ferroelectric interfacial systems with emphasis on the ferroelectric control of the electronic properties of interfacial devices with well ordered (epitaxial) interfaces. In particular, we consider the cases of ferroelectric interfacial systems aimed at controlling the correlated state, including superconductivity, Mott metallic-insulator transition, magnetism, charge, and orbital order, and charge and spin transport across ferroelectric tunnel junctions. The focus is on the basic physical mechanisms underlying the emergence of interfacial effects, the nature of the ferroelectric control of the electronic state, and the role of extreme electric field gradients at the interface in giving rise to new physical phenomena. Such understanding is key to the development of ferroelectric interfacial systems with characteristics suitable for next generation electronic devices based on controlling the correlated state of matter.

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外延铁电界面器件

铁电界面器件由材料系统组成，其界面电子特性（例如 2D 电子气或界面磁自旋配置）由设置在其附近的铁电层调制。虽然这种系统的典型例子是 1950 年代首次提出的铁电场效应晶体管，但只有随着外延薄膜和异质结构的受控生长的最新进展，以及最近对筛选过程的原子尺度的物理理解通过第一性原理计算使铁电-半导体和金属界面成为可能，已经满足了该领域全面发展的条件。在这次审查中，我们讨论了铁电界面系统的最新进展，重点是对具有有序（外延）界面的界面器件的电子特性进行铁电控制。特别是，我们考虑了旨在控制相关状态的铁电界面系统的情况，包括超导性、莫特金属-绝缘体跃迁、磁性、电荷和轨道顺序，以及跨铁电隧道结的电荷和自旋输运。重点是界面效应出现的基本物理机制、电子态铁电控制的性质，以及界面处极端电场梯度在产生新物理现象中的作用。