Lead zirconate titanate (PZT) thin films stand for a prominent technological brick in the field of microsystems. The recent improvements of their manufacturability combined with excellent piezoelectric properties have enabled their introduction in industrial clean rooms all around the world. These films require annealing temperatures beyond 600 °C to crystallize in the desired perovskite phase, which exhibits outstanding piezoelectric coefficients. This temperature requirement forbids large application fields such as flexible electronics, smart glass but also system-on-chip approaches. Decreasing the annealing temperature of PZT films would therefore spread further their potential usage to other applications. The purpose of this paper is to provide the reader with a comprehensive review of the different techniques available in the literature to process piezoelectric PZT thin films at temperatures compatible with semiconductors (450 °C), smart glass (400 °C), or flexible electronics (350 °C). We first present the typical ferroelectric and piezoelectric properties of PZT films. The different deposition techniques and growth mechanisms of these films are then reviewed with a focus on thermodynamics. Then, all the low temperature processes are detailed, such as seeding effects, the modification of deposition parameters in vapor-phase deposition, special annealing technologies assisted with UV, lasers, flash lamps, microwave radiations or high-pressure, a focus on the hydrothermal method, and finally what is called solution chemistry design with notably combustion synthesis. Transfer processing is also detailed, as an alternative way to this low temperature approach. An outlook of future applications enabled by these innovative techniques is finally provided.

中文翻译：

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锆钛酸铅薄膜的低温加工：进展、策略和应用

锆钛酸铅 (PZT) 薄膜代表微系统领域的重要技术砖。其可制造性的最近改进与出色的压电性能相结合，使其能够在世界各地的工业洁净室中引入。这些薄膜需要超过 600°C 的退火温度才能在所需的钙钛矿相中结晶，该相具有出色的压电系数。这种温度要求禁止大型应用领域，如柔性电子、智能玻璃以及片上系统方法。因此，降低 PZT 薄膜的退火温度将进一步扩展其在其他应用中的潜在用途。本文的目的是向读者提供对文献中可用的不同技术的全面回顾，这些技术可在与半导体 (450 °C)、智能玻璃 (400 °C) 或柔性电子设备兼容的温度下处理压电 PZT 薄膜(350°C)。我们首先介绍了 PZT 薄膜的典型铁电和压电特性。然后重点介绍这些薄膜的不同沉积技术和生长机制，重点关注热力学。然后，详细介绍了所有低温过程，例如种子效应、气相沉积中沉积参数的修改、紫外线、激光、闪光灯、微波辐射或高压辅助的特殊退火技术，重点关注热液方法，最后是所谓的溶液化学设计，尤其是燃烧合成。作为这种低温方法的替代方法，还详细介绍了转移处理。最后提供了这些创新技术支持的未来应用的前景。