Efficient and controlled charge transport in networks of semiconducting single-walled carbon nanotubes is the basis for their application in electronic devices, especially in field-effect transistors and thermoelectrics. The recent advances in selective growth, purification, and sorting of semiconducting and even monochiral carbon nanotubes have enabled field-effect transistors with high carrier mobilities and on/off current ratios that were impossible a few years ago. They have also allowed researchers to examine the microscopic interplay of parameters such as nanotube length, density, diameter distribution, carrier density, intentional and unintentional defects, dielectric environment, etc., and their impact on the macroscopic charge transport properties in a rational and reproducible manner. This review discusses various models that are considered for charge transport in nanotube networks and the experimental methods to characterize and investigate transport beyond simple conductivity or transistor measurements. Static and dynamic absorption, photoluminescence and electroluminescence spectroscopy, as well as scanning probe techniques (e.g., conductive atomic force microscopy, Kelvin probe force microscopy), and their unique insights in the distribution of charge carriers in a given nanotube network and the resulting current pathways will be introduced. Finally, recommendations for further optimization of nanotube network devices and a list of remaining challenges are provided.

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半导体碳纳米管网络中的电荷传输

半导体单壁碳纳米管网络中有效和受控的电荷传输是它们在电子器件中应用的基础，特别是在场效应晶体管和热电器件中。最近在半导体甚至单手性碳纳米管的选择性生长、纯化和分选方面取得的进展使场效应晶体管具有高载流子迁移率和开/关电流比，这在几年前是不可能的。它们还允许研究人员以合理和可重复的方式检查参数的微观相互作用，如纳米管长度、密度、直径分布、载流子密度、有意和无意的缺陷、介电环境等，以及它们对宏观电荷传输特性的影响。方式。本综述讨论了被考虑用于纳米管网络中电荷传输的各种模型，以及用于表征和研究超越简单电导率或晶体管测量的传输的实验方法。静态和动态吸收、光致发光和电致发光光谱，以及扫描探针技术（例如，导电原子力显微镜、开尔文探针力显微镜），以及他们对给定纳米管网络中电荷载流子分布和由此产生的电流通路的独特见解将介绍。最后，提供了进一步优化纳米管网络设备的建议和剩余挑战的列表。