Achieving high thermoelectric performance in thin film heterostructures is essential for integrated and miniatured thermoelectric device applications. In this work, we demonstrate a mechanism and device performance of enhanced thermoelectric performance induced by interfacial effect in a transition metal dichalcogenides-SrTiO₃ (STO) heterostructure. Owing to the formed conductive interface and elevated conductivity, the ZrTe₂/STO heterostructure presents large thermoelectric power factor of 3.7 × 10⁵ μWcm⁻¹K⁻² at 10 K. Formation of quasi-two-dimensional conductance at the interface is attributed for the large Seebeck coefficient and high electrical conductivity, leading to high thermoelectric performance which is demonstrated by a prototype device attaining 3 K cooling with 100 mA current input to this heterostructure. This superior thermoelectric property makes this heterostructure a promising candidate for future thermoelectric device.

在薄膜异质结构中实现高热电性能对于集成和微型热电器件应用至关重要。_{在这项工作中，我们展示了由过渡金属二硫属化物-SrTiO 3} (STO) 异质结构中的界面效应引起的增强热电性能的机制和器件性能。由于形成的导电界面和提高的电导率，ZrTe _{2 /STO 异质结构在 10 K 时呈现出 3.7 × 10} ⁵ μWcm ^-1 K ^-2的大热电功率因数。 在界面处形成准二维电导归因于大塞贝克系数和高电导率，导致高热电性能，这通过原型设备在 100 mA 电流输入到该异质结构的情况下实现 3 K 冷却得到证明。这种优异的热电特性使这种异质结构成为未来热电器件的有希望的候选者。