We developed a localized plasma-enhanced chemical vapor deposition (PE-CVD) technique to deposit silicon oxide with a sub-micrometer width on a substrate using an atmospheric pressure plasma jet (APPJ) irradiated from a nanopipette nozzle. To realize fine material deposition, hexamethyldisiloxane (HMDSO) vapor was blown into the localized helium APPJ irradiated from the sub-micrometer aperture of the nanpopipette with the jet length limited to the aperture size of the nanopipette. The irradiation distance was controlled using a shear-force positioning technique using scanning probe microscopy (SPM). The proposed system successfully deposited silicon oxide dots with sub-micrometer width on a substrate. After the deposition, the topography of the deposited surface was observed by scanning the nanopipette, which can be used as an SPM probe. The localized PE-CVD properties were systematically investigated by varying the deposition parameters. The amount of deposited material could be controlled by the flow rate of the carrier gas of the HMDSO vapor, APPJ irradiation time, and nanopipette–substrate surface irradiation distance.

中文翻译：

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使用由纳米移液管扫描探针显微镜定位的大气压等离子体射流进行亚微米等离子体增强化学气相沉积

我们开发了一种局部等离子体增强化学气相沉积 (PE-CVD) 技术，使用从纳米吸管喷嘴照射的大气压等离子体射流 (APPJ) 在基板上沉积亚微米宽度的氧化硅。为了实现精细材料沉积，将六甲基二硅氧烷 (HMDSO) 蒸气吹入从纳米吸管的亚微米孔径照射的局部氦 APPJ 中，射流长度受限于纳米吸管的孔径尺寸。使用扫描探针显微镜 (SPM) 的剪切力定位技术控制照射距离。所提出的系统成功地在衬底上沉积了具有亚微米宽度的氧化硅点。沉积后，通过扫描纳米吸管来观察沉积表面的形貌，纳米吸管可用作 SPM 探针。通过改变沉积参数系统地研究了局部 PE-CVD 特性。沉积材料的量可以通过 HMDSO 蒸汽的载气流速、APPJ 照射时间和纳米吸管-基板表面照射距离来控制。