Two kinds of carrier’s passivating contact capping stacks have been fostered for an asymmetric silicon based solar cell, in which ITO/a-SiO_x(In) is for hole selection and possesses graded distribution of In, Si, O elements as well as intrinsic- and p-type ultrathin SiO_x(In) layer trait, while the SiO_x-TiN_y layer on rear of n-Si absorber is for electron selection and behaves as a degenerated material with higher electron concentration (10²³-10²⁴ /cm³). By using Hall effect, X-ray photoemission and minority carrier lifetime measurements and simulation analyses with AFORS-HET software of TiN_y films and ITO/a-SiO_x(In)/n-Si/SiO_x-TiN_y device, respectively, it is found that the performance of the device is strongly correlated to the N deficiency of TiN_y film, in addition the simulation results demonstrate that the reduced density of interface state (D_it(E)) and the enhanced near-infrared response (EQE) lead to an increase of open-circuit voltage from 578.6 to 744.1 mV, and power conversion efficiency (PCE) has increased by 30.65%, compared with the prototype of semiconductor-quasi-insulator-semiconductor device (SQIS). Moreover, a monolithic tandem device by n-i-p type perovskite cell tunnel-connected to the modified SQIS cell has achieved a PCE of 31.39%, which is predicted through an available estimation under the maximum values of the J_sc, V_oc and pFF.

已经为非对称硅基太阳能电池培育了两种载流子钝化接触覆盖堆栈，其中 ITO/a-SiO _x (In) 用于空穴选择并具有 In、Si、O 元素的梯度分布以及本征-和 p 型超薄 SiO _x (In) 层特性，而n-Si 吸收体背面的 SiO _x -TiN _y层用于电子选择，表现为具有较高电子浓度 (10 ²³ -10 ²⁴ /cm ³）。通过使用霍尔效应、X 射线光发射和少数载流子寿命测量以及使用 TiN _y薄膜和 ITO/a-SiO _{x 的}AFORS-HET 软件进行模拟分析(In)/n-Si/SiO _x -TiN _y器件，发现器件的性能与 TiN _y薄膜的 N 缺乏密切相关，此外模拟结果表明界面密度降低状态 (D _it (E)) 和增强的近红外响应 (EQE) 导致开路电压从 578.6 mV 增加到 744.1 mV，与原型相比，功率转换效率 (PCE) 提高了 30.65%半导体准绝缘体半导体器件 (SQIS)。此外，由 nip 型钙钛矿电池隧道连接到改进的 SQIS 电池的单片串联器件实现了 31.39% 的 PCE，这是通过在 J 的最大值下的可用估计来预测的_sc、V _oc和pFF。