Adiabatic rapid passage (ARP) is demonstrated in a single In(Ga)As quantum dot (QD) over a wide range of laser tuning relative to the exciton transition energy to assess the level of robustness of this quantum state inversion gate for practical QD systems. Our experiments indicate a drop in exciton inversion by only 5% for a detuning of 9.3 meV, indicating accessible detunings that span the typical inhomogeneous broadening of self-assembled QD ensembles. Our findings indicate that ARP is an ideal control protocol for synchronous triggering of quantum light sources for applications in photonic quantum technology.

中文翻译：

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半导体量子点中量子状态反转的绝热快速通道鲁棒性的实验量化

绝热快速通道 (ARP) 在单个 In(Ga)As 量子点 (QD) 中在相对于激子跃迁能量的大范围激光调谐中得到证明，以评估该量子态反转门在实际 QD 系统中的稳健性水平. 我们的实验表明，对于 9.3 meV 的失谐，激子反转仅下降了 5%，表明可实现的失谐跨越自组装 QD 系综的典型非均匀展宽。我们的研究结果表明，ARP 是同步触发量子光源的理想控制协议，适用于光子量子技术应用。