The operation of the modern accelerators has long been challenged with the problems associated with distributed vacuum profile and electron multipacting. Applying a Ti-Zr-V based non-evaporable getter (NEG) film provides an ideal solution to these problems, except that TiZrV thin film may deteriorate the wakefield effect because of the increased wall resistivity. To deal with the trade-offs between those effects, an innovative quaternary TiZrVCu NEG film was prepared using magnetron sputtering technique in the present study. Through comparative study on the activation behavior, secondary electron yields and the surface resistivity of the novel TiZrVCu getter film with that of the conventional TiZrV film, it is found that alloying Cu into the TiZrV film would encouragingly eliminate the secondary electron yield and the d.c. resistivity of the NEG films, with a minor deterioration on the activation kinetics. The present study provides insights for optimizing the composition of NEG films from the aspect of realizing synergy manipulation of the activation kinetics, SEY and d.c resistivity.

现代加速器的运行长期以来一直面临着与分布式真空分布和电子多重作用相关的问题的挑战。应用基于 Ti-Zr-V 的非蒸发性吸气剂 (NEG) 薄膜为这些问题提供了理想的解决方案，但 TiZrV 薄膜可能会因壁电阻率增加而使尾场效应恶化。为了处理这些效应之间的权衡，本研究中使用磁控溅射技术制备了一种创新的四元 TiZrVCu NEG 薄膜。通过对新型 TiZrVCu 吸气剂薄膜与传统 TiZrV 薄膜的活化行为、二次电子产率和表面电阻率的比较研究，发现将 Cu 合金化到 TiZrV 薄膜中将鼓励消除二次电子产率和直流电。NEG 薄膜的电阻率，活化动力学略有恶化。本研究从实现活化动力学、SEY 和直流电阻率的协同操纵方面为优化 NEG 薄膜的组成提供了见解。