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Effects of Al2O3 surface passivation on the radiation hardness of IGTO thin films for thin-film transistor applications
Applied Surface Science ( IF 6.3 ) Pub Date : 2021-12-01 , DOI: 10.1016/j.apsusc.2021.152096
Seong-Hyun Hwang 1 , Kie Yatsu 1 , Dong-Ho Lee 1 , Ick-Joon Park 2 , Hyuck-In Kwon 1
Affiliation  

In this study, we examined the effects of aluminum oxide (Al2O3) surface passivation on the radiation damage of indium-gallium-tin oxide (IGTO) thin films and radiation hardness of IGTO thin-film transistors (TFTs). The radiation hardness of the TFTs was investigated using a 3.5-MeV proton beam at a dose of 1013 cm−2. From the obtained results, it was observed that the radiation hardness significantly improved with a decrease in the thickness of the Al2O3 passivation layer. In addition, the IGTO TFT passivated by an Al2O3 thin film prepared using sputtering exhibited a higher radiation resistance than that passivated by an Al2O3 thin film formed using the atomic layer deposition method, even when the film thickness was the same. From the thin-film analyses carried out on various Al2O3/IGTO samples before and after proton irradiation, it was observed that the thickness and deposition technique of the Al2O3 passivation layer substantially affected the concentration of oxygen vacancies and hydrogen within the IGTO thin film after proton irradiation. Overall, our results showed that the passivation layer significantly affects the radiation hardness of oxide TFTs, and that it is necessary to optimize the thickness and deposition technique of the passivation layer to obtain radiation-tolerant oxide TFTs.



中文翻译:

Al2O3 表面钝化对薄膜晶体管应用中 IGTO 薄膜辐射硬度的影响

在这项研究中,我们研究了氧化铝 (Al 2 O 3 ) 表面钝化对氧化铟镓锡 (IGTO) 薄膜的辐射损伤和 IGTO 薄膜晶体管 (TFT) 的辐射硬度的影响。使用剂量为10 13 cm -2的3.5-MeV质子束研究TFT的辐射硬度。从所得结果可以看出,随着Al 2 O 3钝化层厚度的减小,辐射硬度显着提高。此外,使用溅射制备的 Al 2 O 3薄膜钝化的 IGTO TFT表现出比 Al 钝化的更高的耐辐射性。使用原子层沉积法形成的2 O 3薄膜,即使膜厚相同。从质子辐照前后对各种 Al 2 O 3 /IGTO 样品进行的薄膜分析可以看出,Al 2 O 3钝化层的厚度和沉积技术显着影响了其中的氧空位和氢浓度。质子辐照后的 IGTO 薄膜。总的来说,我们的结果表明钝化层显着影响氧化物 TFT 的辐射硬度,需要优化钝化层的厚度和沉积技术以获得耐辐射的氧化物 TFT。

更新日期:2021-12-04
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