In this study, we examined the effects of aluminum oxide (Al₂O₃) surface passivation on the radiation damage of indium-gallium-tin oxide (IGTO) thin films and radiation hardness of IGTO thin-film transistors (TFTs). The radiation hardness of the TFTs was investigated using a 3.5-MeV proton beam at a dose of 10¹³ cm⁻². From the obtained results, it was observed that the radiation hardness significantly improved with a decrease in the thickness of the Al₂O₃ passivation layer. In addition, the IGTO TFT passivated by an Al₂O₃ thin film prepared using sputtering exhibited a higher radiation resistance than that passivated by an Al₂O₃ thin film formed using the atomic layer deposition method, even when the film thickness was the same. From the thin-film analyses carried out on various Al₂O₃/IGTO samples before and after proton irradiation, it was observed that the thickness and deposition technique of the Al₂O₃ passivation layer substantially affected the concentration of oxygen vacancies and hydrogen within the IGTO thin film after proton irradiation. Overall, our results showed that the passivation layer significantly affects the radiation hardness of oxide TFTs, and that it is necessary to optimize the thickness and deposition technique of the passivation layer to obtain radiation-tolerant oxide TFTs.

在这项研究中，我们研究了氧化铝 (Al ₂ O ₃ ) 表面钝化对氧化铟镓锡 (IGTO) 薄膜的辐射损伤和 IGTO 薄膜晶体管 (TFT) 的辐射硬度的影响。使用剂量为10 ¹³ cm ^-2的3.5-MeV质子束研究TFT的辐射硬度。从所得结果可以看出，随着Al ₂ O ₃钝化层厚度的减小，辐射硬度显着提高。此外，使用溅射制备的 Al ₂ O ₃薄膜钝化的 IGTO TFT表现出比 Al 钝化的更高的耐辐射性。使用原子层沉积法形成的₂ O ₃薄膜，即使膜厚相同。从质子辐照前后对各种 Al ₂ O ₃ /IGTO 样品进行的薄膜分析可以看出，Al ₂ O ₃钝化层的厚度和沉积技术显着影响了其中的氧空位和氢浓度。质子辐照后的 IGTO 薄膜。总的来说，我们的结果表明钝化层显着影响氧化物 TFT 的辐射硬度，需要优化钝化层的厚度和沉积技术以获得耐辐射的氧化物 TFT。