Area-selective deposition (ASD) is an emerging technique in the semiconductor industry with a downscaling feature size, as it generally allows a reduction of the number of process steps, improves cost-efficiency and placement accuracy, but remains compatible with CMOS processes. Among various ASD technics, area-selective atomic layer deposition (AS-ALD) with polymeric inhibitors has the advantage of being able to easily manipulate surface chemistry. We propose the AS-ALD of ZnO using a poly(2,2,2-trifluoroethyl methacrylate) (PTFEMA), which shows superior deposition suppression on the surface based on its hydrophobicity. Fluorine is essentially inert to diethyl zinc and H₂O, and sufficient thermal stability helps to maximize the nucleation delay of ZnO. We achieved almost perfect selectivity of ZnO AS-ALD between SiO₂ and PTFEMA, and the selectivity was highly durable regardless of severe depositing conditions. In addition, the performance was also demonstrated with Cu₃N, proving the versatility of the inhibitor for utilizing conventional reactants (H₂O and NH₃). We fabricated the ZnO field effect transistors as proof-of-concept devices using a polymeric inhibitor and AS-ALD achieving a modest switching property (on/off current ratio > 10⁶). Simple formation and removal of chemical contrast will provide an effective route for employing AS-ALD process to address challenges in recent device fabrication.

区域选择性沉积 (ASD) 是半导体行业的一项新兴技术，具有缩小特征尺寸，因为它通常可以减少工艺步骤数量，提高成本效率和放置精度，但仍与 CMOS 工艺兼容。在各种 ASD 技术中，使用聚合物抑制剂的区域选择性原子层沉积 (AS-ALD) 具有能够轻松操纵表面化学的优势。我们提出了使用聚（2,2,2-甲基丙烯酸三氟乙酯）（PTFEMA）的 ZnO 的 AS-ALD，基于其疏水性在表面上显示出优异的沉积抑制。氟对二乙基锌和 H ₂基本上呈惰性O 和足够的热稳定性有助于最大化 ZnO 的成核延迟。我们在 SiO ₂和 PTFEMA之间实现了几乎完美的 ZnO AS-ALD选择性，并且无论严酷的沉积条件如何，该选择性都非常耐用。此外，Cu ₃ N也证明了该性能，证明了该抑制剂对于利用常规反应物（H ₂ O 和 NH ₃）的多功能性。我们使用聚合物抑制剂和 AS-ALD 制造了 ZnO 场效应晶体管作为概念验证器件，实现了适度的开关特性（开/关电流比 > 10 ⁶）。化学对比的简单形成和去除将为采用 AS-ALD 工艺解决最近器件制造中的挑战提供有效途径。