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High efficiency p-n constructed photocatalysts based on exposed (040) crystal planes of BiVO4
Optical Materials ( IF 3.8 ) Pub Date : 2021-12-01 , DOI: 10.1016/j.optmat.2021.111824
Xue Li 1 , Li-Juan Jian 1 , Li Wang 1 , Rong-Han Liu 1 , Yun Zhao 1 , Jiang-Tao Chen 1 , Yan Li 1
Affiliation  

Strategy of designing new-structured semiconductor photocatalysts with great electron-hole pairs separation is meaningful for improving the photocatalytic pollution abatement. Herein, on the basis of decahedral BiVO4 with largely exposed (040) crystal facet, p-n hetero-nanostructured NiS@(040)-BiVO4 catalysts with various molar ratio of NiS were fabricated by a facile two-step hydrothermal method to study the photo-degradation activities under visible-light irradiation. To photo-degrade anion methyl orange (MO), cation rhodamine B (RhB) and tetracyclines (TC), such nanostructures can all exhibit excellent photocatalytic activities. Compared with pure (040)-BiVO4 and NiS nanoparticles, 0.6 M ratio of NiS@(040)-BiVO4 possesses 8.6, 8.9 and 6.5 times higher photocatalytic capacity (MO: 98.6%, RhB: 99.1%, TC: 98.4%) and 49.2, 64.2 and 27.7 times faster photocatalytic rate (MO: 8.4060 h−1, RhB: 8.2854 h−1, TC: 7.6230 h−1). Detailed analyses show the superior light-harvesting, higher photocurrent response, excellent charge separation and improved charge transport properties are the main factors resulting the high efficient photocatalytic performance of NiS@(040)-BiVO4 nanostructures. Besides, the forming of facet isotype heterojunctions between (040) and (220) lattice planes in BiVO4 can also help to get more active photo-induced electrons for photocatalysis.



中文翻译:

基于BiVO4暴露(040)晶面的高效pn结构光催化剂

设计具有大电子-空穴对分离的新型结构半导体光催化剂的策略对于改善光催化污染的减少具有重要意义。在此,基于具有大量暴露的 (040) 晶面的十面体 BiVO 4,通过简便的两步水热法制备了具有不同 NiS 摩尔比的pn 异质纳米结构 NiS@(040)-BiVO 4催化剂,以研究可见光照射下的光降解活性。为了光降解阴离子甲基橙(MO)、阳离子罗丹明B(RhB)和四环素(TC),这些纳米结构都可以表现出优异的光催化活性。与纯 (040)-BiVO 4和 NiS 纳米颗粒相比,NiS@(040)-BiVO 4 的比例为 0.6 M具有8.6,8.9和更高的6.5倍的光催化能力(MO:98.6%,罗丹明B:99.1%,TC:98.4%)和49.2,64.2和27.7倍的速度光催化速率(MO:8.4060ħ -1,罗丹明B:8.2854ħ -1 , TC: 7.6230 h -1 )。详细分析表明,优异的光捕获、更高的光电流响应、优异的电荷分离和改进的电荷传输性能是导致 NiS@(040)-BiVO 4纳米结构高效光催化性能的主要因素。此外,在BiVO 4 中(040)和(220)晶面之间形成小面同型异质结也有助于获得更活跃的光生电子用于光催化。

更新日期:2021-12-01
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