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Stable plasmonic nano-trapping using a hybrid gold-graphene V-trench with an extremely deep potential well
Optical Materials Express ( IF 2.8 ) Pub Date : 2021-11-30 , DOI: 10.1364/ome.442736
Danthure Arachchige Dayantha Lankanath Karunasena 1 , Guangqing Du , Qing Yang 1 , Gulshan Iqbal 1 , Noor Uddin 1 , Xun Hou 1 , Feng Chen
Affiliation  

We theoretically investigated the stable plasmonic trapping of sub-50nm targets using integrated gold-graphene V-trench with extremely deep trapping potential well. A hybrid plasmonic trapping model is self-consistently built, which considers the surface plasmons excitation for supporting the scattering and gradient optical forces on the diffraction-limit broken nano-scale. It is demonstrated that trapping of 40 nm gold nano-sphere within the designed hybrid nano-V-trench is achieved via optimal laser intensity in visible spectra. More interestingly, it is observed that the hybrid nano-V-trench forms a vertical potential well having an extremely deep potential well of 85 KBT on the trapped 40 nm gold particle. Formation of an extremely high potential well can be explained by the perspective of localized electric field enhancement inside the nano-V-trench, which was reinforced by the involvement of graphene plasmons in the hybrid plasmonic system. This work can be helpful for well understanding of nanoparticles trapping with high stability, which is useful for the nano-manipulations in the applications of quantum dots lighting, SERS nano-sensor and nano sphere plasmonic lithography.

中文翻译:

使用具有极深势阱的混合金-石墨烯 V 型沟槽进行稳定的等离子体纳米捕获

我们从理论上研究了使用具有极深捕获势阱的集成金-石墨烯 V 型沟槽对亚 50nm 目标的稳定等离子体捕获。自洽建立了一个混合等离子体捕获模型,它考虑了表面等离子体激发以支持衍射极限破碎纳米尺度上的散射和梯度光学力。结果表明,在设计的混合纳米 V 形沟槽内捕获 40 nm 金纳米球是通过可见光谱中的最佳激光强度实现的。更有趣的是,观察到混合纳米 V 形沟槽形成了一个垂直势阱,具有 85 K B 的极深势阱被捕获的 40 nm 金颗粒上的 T。极高势阱的形成可以通过纳米 V 型沟槽内部局部电场增强的角度来解释,这通过石墨烯等离子体在混合等离子体系统中的参与而得到加强。这项工作有助于更好地理解纳米粒子具有高稳定性的捕获,这对于量子点照明、SERS 纳米传感器和纳米球等离子体光刻应用中的纳米操作非常有用。
更新日期:2021-12-01
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