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Realization of exchange bias control with manipulation of interfacial frustration in magnetic complex oxide heterostructures
Physical Review B ( IF 3.2 ) Pub Date : 2021-11-30 , DOI: 10.1103/physrevb.104.174444
Ji Zhang , Jack Yang , Grace L. Causer , Junjie Shi , Frank Klose , Jing-Kai Huang , Allen Tseng , Danyang Wang , Xiaotao Zu , Liang Qiao , Anh Pham , Sean Li

Rich exchange bias (EB) behaviors were previously observed when ferromagnetic (FM) materials contacted a spin glass, demonstrating magnetic degrees of freedom of the coupling between the glass and FM spins. However, the correlation between the degree of magnetic spin frustration and the strength of the resulting EB is far from being understood. Here, we systematically investigate the dependency of EB on interfacial spin frustration in magnetic complex oxide heterostructures including La0.7Ca0.3MnO3/CaMnO3 (LCMO/CMO) systems. The experimental analysis revealed that the extent of interfacial spin frustration is determined by the subtle competition between different types of magnetic orders related to the glassy spin behaviors at the interface. Such spin frustration can be manipulated through strain engineering through changes in the Mn eg orbital by alternating the stacking sequence of the heterostructures. A highly tunable EB field with 95% change of strength between the highly and weakly frustrated heterostructures has been achieved. Magnetic depth profiles of the heterostructures provide convincing evidence that a magnetically depressed region always occurs in the LCMO layer at the LCMO/CMO interfaces irrespective of the stacking sequence. Finally, EB is established at the magnetic interface in the LCMO layer.

中文翻译:

通过操纵磁性复合氧化物异质结构中的界面挫折实现交换偏置控制

当铁磁 (FM) 材料接触自旋玻璃时,先前观察到丰富的交换偏置 (EB) 行为,证明了玻璃和 FM 自旋之间耦合的磁性自由度。然而,磁自旋受阻程度与所得 EB 强度之间的相关性尚不清楚。在这里,我们系统地研究了 EB 对磁性复合氧化物异质结构中界面自旋受挫的依赖性,包括0.70.33/钙锰3(LCMO/CMO) 系统。实验分析表明,界面自旋受阻的程度取决于与界面玻璃自旋行为相关的不同类型磁序之间的微妙竞争。这种自旋受阻可以通过应变工程通过 Mn 的变化来操纵电子G通过交替异质结构的堆叠顺序来改变轨道。已经实现了高度可调的 EB 场,高度和弱受挫异质结构之间的强度变化为 95%。异质结构的磁性深度分布提供了令人信服的证据,即无论堆叠顺序如何,在 LCMO/CMO 界面处的 LCMO 层中总是出现磁压区。最后,在 LCMO 层的磁性界面处建立 EB。
更新日期:2021-11-30
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