Intrinsic magnetic topological insulators provide an ideal platform to achieve various exciting physical phenomena. However, this kind of materials and related research are still very rare. In this work, we reported the electronic and structural phase transitions in the intrinsic magnetic topological insulator $\mathrm{Mn}{\mathrm{Sb}}_2{\mathrm{Te}}_4$ driven by hydrostatic pressure. Electric transport results revealed that temperature dependent resistance showed a minimum value near short-range antiferromagnetic (AFM) ordering temperature ${T_N}^{\prime }$, which declines with pressure. The short-range AFM ordering was sensitive to pressure and fully suppressed above 11.5 GPa. The intensity of three Raman vibration modes in $\mathrm{Mn}{\mathrm{Sb}}_2{\mathrm{Te}}_4$ declined quickly starting from 7.5 GPa and these modes become undetectable above 9 GPa, suggesting possible insulator-metal transition, which is further confirmed by theoretical calculation. In situ x-ray diffraction demonstrated that an extra diffraction peak appears near 9.1 GPa and $\mathrm{Mn}{\mathrm{Sb}}_2{\mathrm{Te}}_4$ started to enter an amorphouslike state above 16.6 GPa, suggesting the structural origin of suppressed AFM ordering and metallization. This work has demonstrated the correlation among interlayer interaction, magnetic ordering, and electric behavior, which could be benefit the understanding of the fundamental properties of this kind of materials and devices.

中文翻译：

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本征磁拓扑绝缘体MnSb2Te4中压力驱动的电子和结构相变

本征磁拓扑绝缘体为实现各种令人兴奋的物理现象提供了理想的平台。但是，这种材料和相关研究仍然非常少见。在这项工作中，我们报告了本征磁拓扑绝缘体中的电子和结构相变$锰{锑}_2{特}_4$由静水压力驱动。电输运结果表明，温度相关电阻在短程反铁磁 (AFM) 有序温度附近显示出最小值${{吨}_N}^{\prime }$，随压力下降。短程 AFM 排序对压力敏感，完全抑制在 11.5 GPa 以上。三种拉曼振动模式的强度$锰{锑}_2{特}_4$从 7.5 GPa 开始迅速下降，并且这些模式在 9 GPa 以上变得无法检测，这表明可能的绝缘体 - 金属转变，这通过理论计算得到进一步证实。原位X 射线衍射表明，在 9.1 GPa 附近出现了一个额外的衍射峰，并且$锰{锑}_2{特}_4$开始进入 16.6 GPa 以上的无定形状态，表明抑制 AFM 有序和金属化的结构起源。这项工作证明了层间相互作用、磁序和电行为之间的相关性，这可能有助于理解此类材料和器件的基本特性。