Three-dimensional integration using through-silicon via (TSV) can significantly improve the performance and power consumption of microelectronic devices. In order to connect more chips vertically using TSV, the silicon wafer should be as thin as possible. As the most widely used method for wafer thinning, constant-feed grinding inevitably introduces serious mechanical damage and stress within a wafer, while common stress-relief processes such as chemical mechanical polishing (CMP) and etching cannot effectively balance the material removal rate and surface quality. To address these issues, in the present research, a novel thinning method was proposed that sequentially used constant-pressure diamond grinding and fixed-abrasive CMP to thin a wafer. It was found that by selecting the proper abrasive size and pressure, the constant-pressure diamond grinding can achieve both high-efficiency thinning and low-damage ductile removal of silicon. However, this method always generated processing stresses of 500–2000 MPa on the surface and produced a stress propagation layer with a depth of several tens of microns. The fixed-abrasive CMP utilized the tribochemical reaction between the CeO₂ abrasive and silicon under friction to achieve effective material removal. The results demonstrated that this approach could provide an ultra-smooth surface with a roughness less than Ra 2 nm while the processing stress was no more than 150 MPa, making it ideal for the removal of grinding damage layers. By conducting sequential thinning with constant-pressure diamond grinding and fixed-abrasive CMP, this method proved to be an effective technique for the preparation of ultra-thin silicon wafers, exhibiting superior application prospects.

使用硅通孔 (TSV) 的三维集成可以显着提高微电子器件的性能和功耗。为了使用 TSV 垂直连接更多芯片，硅片应尽可能薄。作为最广泛使用的晶圆减薄方法，恒进给磨削不可避免地会在晶圆内部引入严重的机械损伤和应力，而化学机械抛光（CMP）和蚀刻等常见的应力消除工艺无法有效平衡材料去除率和表面质量。为了解决这些问题，在本研究中，提出了一种新的减薄方法，依次使用恒压金刚石研磨和固定磨料 CMP 来减薄晶片。研究发现，通过选择合适的磨料尺寸和压力，恒压金刚石磨削可实现硅的高效减薄和低损伤韧性去除。然而，这种方法总是在表面产生 500-2000 兆帕的加工应力，并产生一个深度为几十微米的应力传播层。固定磨料 CMP 利用 CeO 之间的摩擦化学反应₂磨料和硅在摩擦下达到有效的材料去除。结果表明，该方法可以提供粗糙度小于 Ra 2 nm 的超光滑表面，同时加工应力不超过 150 MPa，非常适合去除磨削损伤层。通过恒压金刚石研磨和固定磨料CMP进行连续减薄，该方法被证明是制备超薄硅片的有效技术，具有优越的应用前景。