The proposed research reports the simulation of a photonic crystal (PhC) ring-resonator-based full-optical NAND and NOR gate design. The designed structure comprises a 18 30 square lattice dielectric silicon rod-type PhC with a refractive index of n = 3.46. An interatomic distance ‘a’ of 560 nm, radius ‘r’ of 0.21a (0.133 μm) and input wavelength λ = 1550 nm with an input signal amplitude of 1 volt are used in this design. The proposed structure provides two large band gaps in Transverse Electric polarized mode in the ranges of 1342–1980 nm and 758–779 nm. Similar parameters are used for both NAND and NOR logic gate designs. The functionality of the proposed full-optical gates depends on the ring resonator principle and the intensity of the incident light. Numerical analysis of the simulation is based on the finite difference time domain method, whereas band gap analysis is performed using the plane wave expansion method.

拟议的研究报告了基于光子晶体 (PhC) 环形谐振器的全光学 NAND 和 NOR 门设计的模拟。设计的结构包括一个 18 × 30 方形晶格介电硅棒型 PhC，折射率n = 3.46。原子间距离“ a ”为 560 nm，半径“ r ”为 0.21 a (0.133 μ m)，输入波长为λ= 1550 nm，输入信号幅度为 1 伏特用于本设计。所提出的结构在 1342-1980 nm 和 758-779 nm 范围内提供了两个大的横向极化模式带隙。类似的参数用于 NAND 和 NOR 逻辑门设计。所提出的全光门的功能取决于环形谐振器原理和入射光的强度。模拟的数值分析基于有限差分时域方法，而带隙分析是使用平面波展开方法进行的。