AZO/Cu/AZO films were prepared on glass substrates by direct-current magnetron sputtering at room temperature. The effects of the AZO layer on the infrared emissivity and photoelectric properties of AZO/Cu/AZO films were studied. The results show that the infrared emissivity and sheet resistance of the AZO/Cu/AZO films decrease with the AZO layer thickness, and then increase when further increasing the thickness to 40 nm. Meanwhile, the visible transmittance first increase and then decrease slightly. The multilayer film with 40 nm-thickness AZO layer shows the lowest sheet resistance of 9.96 Ω/sq, lowest infrared emissivity of 0.055 and high transmittance of 87.7 %. The sheet resistance and infrared emissivity are associated with the quality of top AZO layer and Cu layer. The bottom AZO layer with optimized thickness is beneficial to the growth of middle Cu layer and top AZO layer, which is facilitate to improve the performance of multilayer films.

在室温下通过直流磁控溅射在玻璃基板上制备偶氮/铜/偶氮薄膜。研究了AZO层对AZO/Cu/AZO薄膜红外发射率和光电性能的影响。结果表明，AZO/Cu/AZO薄膜的红外发射率和薄层电阻随着AZO层厚度的增加而降低，当厚度进一步增加到40 nm时又增加。同时，可见光透射率先增加后略有下降。具有 40 nm 厚 AZO 层的多层薄膜显示出 9.96 Ω/sq 的最低薄层电阻、0.055 的最低红外发射率和 87.7% 的高透射率。薄层电阻和红外发射率与顶层 AZO 层和 Cu 层的质量有关。