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Effects of Field-Effect and Schottky Heterostructure on p-Type Graphene-Based Gas Sensor Modified by n-Type In2O3 and Phenylenediamine
Applied Surface Science ( IF 6.3 ) Pub Date : 2021-11-25 , DOI: 10.1016/j.apsusc.2021.152025
Joung Hwan Choi 1 , Jin Sung Seo 1 , Ha Eun Jeong 2 , KyongHwa Song 2 , Sung-Hyeon Baeck 1 , Sang Eun Shim 1 , Yingjie Qian 1
Affiliation  

Over the past decade, advantages of graphene in high-performance gas sensing have been demonstrated, especially for single- or few-layered graphene wherein the theoretical and technical advances are mature. Owing to the complexity of multi-layered graphene (MLG) sensors and the increasing demand for practical applications, there is an urgent need to comprehensively understand the correlation between MLG and its derivatives for developing next-generation gas sensors. Herein, theoretical and empirical strategies for obtaining better gas sensors are developed. These approaches can be divided into three categories: 1) building devices with Fermi level near the Dirac point (EF,Dirac), 2) enhancing the adsorption probability f(x) and driving force (gap between as-prepared and saturated Fermi levels), and 3) accelerating mobility. A device employing p-type reduced graphene oxide (rGO) decorated with n-type indium oxide and phenylenediamine (GIP) was designed and fabricated by adopting approaches 1 and 2 (EF,Dirac and f(x) enhancement). The resulting hole-compensated GIP displayed a remarkable response to formaldehyde (HCHO), which was 66.3 times higher than rGO, with faster response/recovery. GIP also exhibited higher selectivity for HCHO than for ammonia and trimethylamine. We believe that the classification will untangle the complex role of graphene in sensing, helping to design next-generation advanced gas sensors.



中文翻译:

场效应和肖特基异质结构对 n 型 In2O3 和苯二胺改性的 p 型石墨烯基气体传感器的影响

在过去的十年中,石墨烯在高性能气体传感方面的优势已经得到证明,特别是对于理论和技术进步成熟的单层或少层石墨烯。由于多层石墨烯(MLG)传感器的复杂性和实际应用需求的增加,迫切需要全面了解MLG及其衍生物之间的相关性,以开发下一代气体传感器。在此,开发了用于获得更好的气体传感器的理论和经验策略。这些方法可分为三类:1)建立的设备能够与狄拉克点(接近费米能级ë楼狄拉克),2)提高吸附概率F(X)和驱动力(准备好的和饱和的费米能级之间的差距),以及 3)加速流动性。采用p型的装置降低装饰有n型氧化铟和苯二胺(GIP)的石墨烯氧化物(RGO)的设计和制作通过采用接近1和2(ë楼狄拉克F(X)增强)。由此产生的孔补偿 GIP 对甲醛 (HCHO) 显示出显着的响应,比 rGO 高 66.3 倍,响应/恢复更快。GIP 对 HCHO 的选择性也高于对氨和三甲胺的选择性。我们相信分类将解开石墨烯在传感中的复杂作用,有助于设计下一代先进的气体传感器。

更新日期:2021-12-02
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