We report our investigations on Langmuir-Blodgett (LB) films of different thicknesses of Nickel (II)1,4,8, 11, 15, 18,22,25-octabutoxy-29H, 31H-phthalocyanine (NiPc(OBu)₈) doped with stearic acid on silicon and quartz substrates. We have characterized these films using grazing incidence X-ray diffraction (GIXD), atomic force microscopy and UV–visible spectroscopy techniques. The crystalline nature of the thin film polymorph was ascertained using GIXD. Multilayers deposited at 25 mN/m exhibited a Bragg peak at 4.15° (d = 21.3 Å). The crystallite size is found to increase with thickness and saturates beyond 75 nm. Topographic images of these multilayers acquired using an atomic force microscope reveal the presence of granular morphology. In addition, the height difference correlation analysis of these multilayers show that they are of self-affine nature. The scaling exponents (α = 0.92 ± 0.05, β = 0.22 ± 0.1 and 1/z = 0.17 ± 0.01) signifies kinetic roughening. UV–visible absorbance studies on LB films of NiPc(OBu)₈ doped with stearic acid show a blue shift of Q and B bands compared to the pristine film. Further, the electrical characterization of the film was carried out in dark as well as under UV illumination (365 nm). The transient photocurrent behavior of the device for different illumination cycles is measured at different power densities and bias voltages. A slower response (on the order of few tens of sec) is inferred from the response time of the rise and decay curves. The responsivity and external quantum efficiency of the device for different power densities is also measured.

我们报告了我们对不同厚度的镍 (II) 1,4,8, 11, 15, 18,22,25-八丁氧基-29H, 31H-酞菁 (NiPc(OBu) ₈ ) 的 Langmuir-Blodgett (LB) 薄膜的研究) 在硅和石英衬底上掺杂硬脂酸。我们使用掠入射 X 射线衍射 (GIXD)、原子力显微镜和紫外-可见光谱技术对这些薄膜进行了表征。使用 GIXD 确定薄膜多晶型物的结晶性质。以 25 mN/m 沉积的多层膜在 4.15° (d = 21.3 Å) 处显示出布拉格峰。发现微晶尺寸随厚度增加并在超过 75 nm 时饱和。使用原子力显微镜获得的这些多层的地形图像揭示了颗粒形态的存在。此外，这些多层的高度差相关性分析表明它们具有自仿射性质。缩放指数 (α = 0.92 ± 0.05、β = 0.22 ± 0.1 和 1/z = 0.17 ± 0.01) 表示动力学粗糙化。NiPc(OBu) LB 薄膜的紫外-可见光吸收研究与原始薄膜相比，掺杂硬脂酸的₈显示 Q 和 B 带的蓝移。此外，薄膜的电学特性是在黑暗中以及在紫外线照射（365 nm）下进行的。在不同的功率密度和偏置电压下测量器件在不同照明周期下的瞬态光电流行为。从上升和衰减曲线的响应时间推断出较慢的响应（大约几十秒）。还测量了器件对不同功率密度的响应度和外部量子效率。