Schottky Diode with Asymmetric Metal Contacts on WS2,Advanced Electronic Materials

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Schottky Diode with Asymmetric Metal Contacts on WS2
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2021-11-23 , DOI: 10.1002/aelm.202100941
Jihoon Kim ₁ , A. Venkatesan ₁ , Nhat Anh Nguyen Phan ₁ , Yewon Kim ₁ , Hanul Kim ₂ , Dongmok Whang _{2,

3} , Gil‐Ho Kim _{1,

2}

Affiliation

Diode characteristics of transition metal dichalcogenides are studied extensively owing to their electrical and optical properties. In particular, the Schottky barrier diode (SBD) structure has advantages, such as its small leakage current and power consumption, over conventional p–n diodes. This study develops an SBD system using n-type tungsten disulfide (WS₂). By depositing a low work function In (Φ_In = 4.1 eV) and high work function Au (Φ_Au = 5.1 eV) on n-type WS₂, the diode characteristics are demonstrated to be close to an ideal diode. The In–Au contacts are measured, and SBD characteristics are confirmed with a 1.02 ideality factor at a zero back-gate voltage at room temperature and a rectification ratio up to 5 × 10², even at a low temperature (77 K), indicating almost ideal diode properties. In addition, the In electrodes exhibited improved electrical properties, with a high on/off ratio of 10⁷, mobility that is 100 times higher, and Schottky barrier height that is 20 times lower than that of Au electrodes.

中文翻译：

WS2 上具有非对称金属触点的肖特基二极管

过渡金属二硫化物的二极管特性由于其电学和光学特性而被广泛研究。特别是肖特基势垒二极管（SBD）结构相比传统的p-n二极管具有漏电流小、功耗小等优点。本研究开发了一种使用 n 型二硫化钨 (WS ₂ ) 的 SBD 系统。通过在 n 型 WS ₂上沉积低功函数 In ( Φ _In = 4.1 eV) 和高功函数 Au ( Φ _Au = 5.1 eV)，二极管特性被证明接近理想二极管。测量了 In-Au 触点，SBD 特性在室温下零背栅电压和高达 5 × 10 ²的整流比下以 1.02 的理想因子得到确认，即使在低温 (77 K) 下也是如此，表明几乎理想的二极管特性。此外，In电极表现出改善的电性能，具有10 ⁷的高开/关比、高100倍的迁移率和比Au电极低20倍的肖特基势垒高度。

更新日期：2021-11-23

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