The paper proposes novel solutions to improve the signal and thermal integrity of crossbar arrays of Resistive Random-Access Memories, that are among the most promising technologies for the 3D monolithic integration. These structures suffer from electrothermal issues, due to the heat generated by the power dissipation during the write process. This paper explores novel solutions based on new architectures and materials, for managing the issues related to the voltage drop along the interconnects and to thermal crosstalk between memory cells. The analyzed memristor is the 1 Diode - 1 Resistor memory. The two architectural solutions are given by a reverse architecture and a complementary resistive switching one. Compared to conventional architectures, both of them are also reducing the number of layers where the bias is applied. The electrothermal performance of these new structures is compared to that of the reference one, for a case-study given by a 4 × 4 × 4 array. To this end, a full-3D numerical Multiphysics model is implemented and successfully compared against other models in literature. The possibility of changing the interconnect materials is also analyzed. The results of this performance analysis clearly show the benefits of moving to these novel architectures, together with the choice of new materials.

中文翻译：

---

使用互补和 1D1R-1R1D RRAM 结构增强大型交叉电阻存储器的性能


该论文提出了新颖的解决方案来提高电阻随机存取存储器交叉阵列的信号和热完整性，这是 3D 单片集成最有前途的技术之一。由于写入过程中功耗产生的热量，这些结构存在电热问题。本文探讨了基于新架构和材料的新颖解决方案，用于管理与互连电压降以及存储单元之间的热串扰相关的问题。所分析的忆阻器是 1 个二极管 - 1 个电阻器存储器。这两种架构解决方案由反向架构和互补电阻开关架构给出。与传统架构相比，它们都减少了应用偏置的层数。针对 4 × 4 × 4 阵列给出的案例研究，将这些新结构的电热性能与参考结构的电热性能进行了比较。为此，我们实施了全 3D 数值多物理场模型，并成功与文献中的其他模型进行了比较。还分析了改变互连材料的可能性。该性能分析的结果清楚地表明了转向这些新颖架构以及新材料选择的好处。