Paper presents the study of Ge₂Sb₂Te₅ (GST) thin films phase transitions’ dynamics determined by the rate of their optical coefficients change. The phase transitions were initialized by laser pulses with 15 ns duration at a wavelength of 532 nm and confirmed by X-ray diffraction analysis. Energy fluence was 22 mJ/cm² for film crystallization and 54 mJ/cm² for reamorphization. The time for a complete change of GST film reflectivity associated with the crystallization process was 23 ns, while the time for a transmissivity change was 32 ns. Taking into account that the reflection is determined to a greater extent by the surface, and the transmission is exclusively by the film thickness, the estimated crystallization rate was ∼3.125 m/s. The time for a complete change in the reflectivity during the film reamorphization 62 ns, and the transmissivity changed in 65 ns. The estimated reamorphization rate was ∼1.538 m/s.

本文介绍了 Ge ₂ Sb ₂ Te ₅ (GST) 薄膜相变动力学的研究，由其光学系数变化率决定。相变由持续时间为 15 ns、波长为 532 nm 的激光脉冲初始化，并通过 X 射线衍射分析证实。膜结晶的能量注量为 22 mJ/cm ²和 54 mJ/cm ²用于重晶化。与结晶过程相关的 GST 膜反射率完全变化的时间为 23 ns，而透射率变化的时间为 32 ns。考虑到反射在很大程度上由表面决定，而透射仅由薄膜厚度决定，估计结晶速率为~3.125 m/s。薄膜再晶化过程中反射率完全变化的时间为 62 ns，透射率发生变化的时间为 65 ns。估计的重晶化速率约为 1.538 m/s。