This investigation examines the performance of AlGaN/GaN MISHEMTs having single-gate and dual-gate with different biasing combinations to explore the linearity in terms of g_mpeak, gate voltage swing (GVS) and higher-order coefficients for intermodulation distortion for low-noise amplifiers (LNAs). In addition, the influence of distinct gate biasing configurations of DG-MISHEMT on current collapse (CC) (in response to OFF-state stress in drain) has been studied using TCAD simulations. It has been observed that drop in drain current value after the gate–drain voltages return to quiescent voltages (V_GSQ, V_DSQ) reduces for DG-MISHEMT (when both the gates are shorted together) to 9.1% as compared with 19.4% for SG-MISHEMT. Besides, the CC phenomena for DG-MISHEMTs (for shorted gates) exhibit a slight increase from 9% to 11.8% when workfunction increases from 4.1 eV to 5.2 eV for gate G2. Further, linearity in terms of GVS is observed to be doubled for AlGaN/GaN DG-MISHEMTs with both the gates connected together as compared with device with screen gate G2 shorted to source. Additionally, radio frequency performance has been studied in terms of cut-off frequencies f_T and f_max and minimum noise-figure NF_min for AlGaN/GaN SG-MISHEMT and DG-MISHEMTs for different gate to gate distance i.e., L_GG=100 and 200 nm. It is observed that NF_min is minimum for AlGaN/GaN DG-MISHEMT (with gate G1 floating and gate G2 is biased and L_GG=100 nm) i.e., 1.13 dB with corresponding power gain of 18.7 dB at 50 GHz.

本研究检查了具有不同偏置组合的单栅极和双栅极的 AlGaN/GaN MISHEMT 的性能，以探索 g _mpeak、栅极电压摆幅 (GVS) 和低噪声互调失真的高阶系数方面的线性度放大器 (LNA)。此外，已经使用 TCAD 模拟研究了 DG-MISHEMT 的不同栅极偏置配置对电流崩塌 (CC)（响应漏极中的关态应力）的影响。据观察，在栅极-漏极电压恢复到静态电压（V _GSQ , V _DSQ) 将 DG-MISHEMT（当两个栅极短接在一起时）降低至 9.1%，而 SG-MISHEMT 为 19.4%。此外，当门 G2 的功函数从 4.1  eV 增加到 5.2 eV时，DG-MISHEMT（对于短路门）的 CC 现象略有增加，从 9% 增加到 11.8% 。 此外，与屏蔽栅极 G2 与源极短路的器件相比，两个栅极连接在一起的 AlGaN/GaN DG-MISHEMT 的 GVS 线性度加倍。此外，针对不同门到门距离的 AlGaN/GaN SG-MISHEMT 和 DG-MISHEMT，根据截止频率f _T和f _max以及最小噪声系数 NF _{min研究了射频性能}，即L_GG = 100 和 200 纳米。据观察，对于 AlGaN/GaN DG-MISHEMT（栅极 G1 浮动且栅极 G2 偏置且 L _GG = 100 nm） ，NF _min最小，即1.13 dB，在 50 GHz时相应的功率增益为 18.7 dB。