In this study, pure and La of various concentrations (0.5, 1.0, 1.5, 2.0, and 2.5 wt.%) doped CuO thin films were produced by means of the NSP technique to be used as UV photodetection applications. Various physicochemical investigations such as XRD, SEM, PL, UV–Vis, and current-voltage (I–V) characteristics have been conducted to inspect the role of La in the grown films. X-ray diffraction data confirm the single cubic crystal structure and the size of crystallites shrinkages from 22.6 to 19.4 nm. SEM photo shows the formation of triangular prismic shape like morphology. The spectroscopic studies show that the added La impurity promotes their absorption level in the UV region and redshift the optical bandgap from 2.07 to 1.81 eV. Photoluminescence spectral analysis confirms the presence of oxygen vacancies at 413 nm. Upon exposure to a UV light source (λ = 365 nm) the fabricated La-doped CuO thin films offered a better photo-responsivity, detectivity, and external quantum efficiency value of 1.63 × 10⁻¹ AW⁻¹, 1.75 × 10¹⁰ Jones, and 107% respectively. Our results provide a guideline to design high-performance UV photodetectors.

在这项研究中，通过 NSP 技术生产了各种浓度（0.5、1.0、1.5、2.0 和 2.5 wt.%）的纯和 La 掺杂的 CuO 薄膜，用作紫外光电检测应用。各种物理化学研究，如 XRD、SEM、PL、UV-Vis 和电流-电压（I - V) 特性来检查 La 在生长的薄膜中的作用。X 射线衍射数据证实了单立方晶体结构和微晶尺寸从 22.6 到 19.4 nm 的收缩。SEM照片显示形成类似三棱柱形的形态。光谱研究表明，添加的 La 杂质提高了它们在紫外区的吸收水平，并将光学带隙从 2.07 eV 红移到 1.81 eV。光致发光光谱分析证实在 413 nm 处存在氧空位。在暴露于紫外光源 (λ = 365 nm) 后，制备的 La 掺杂的 CuO 薄膜具有更好的光响应性、探测率和外量子效率值，分别为 1.63 × 10 ^-1 AW ^-1、1.75 × 10 ¹⁰琼斯和 107%。我们的结果为设计高性能紫外光电探测器提供了指导。