The fabrication of Zn_0.5Cd_0.5Te thin film was reported in this study which was prepared via the common vacuum evaporation process at various temperatures (25, 100, 200, 300, 400 and 500 °C). On pre-cleaned glass substrates, the Zn_0.5Cd_0.5Te thin films were formed. The absorption coefficient was used to analyze the linear optical path in this study. The optical parameters, the optical constants, the dielectric constants, the quality factor of the studied thin films and the dispersion parameters were computed. The envelope approach, proposed by Swanepoel, was used to calculate the refractive indices and the thickness of the studied films in the transparent region. The optical energy gap was computed in the transmittance and reflectance spectrum's strong absorption zone. As the temperature of the examined system is increased, the refractive index, n, decreases while the energy gap rises. The annealed thin films have a crystalline structure with cubic phase and primarily oriented along the (111) plane, according to x-ray diffraction results. The crystalline structure of the examined thin films was confirmed by the top view of SEM profiles for the Zn_0.5Cd_0.5Te thin film at various temperatures. In the other part of this work, the photovoltaic characteristics of the fabricated n-Zn_0.5Cd_0.5Te/p-CdTe solar cell were investigated for a solar cell which fabricated by depositing a p-CdTe thin layer (200 nm) on the ZnCdTe thin films (∼1000 nm) prepared on the glass substrates (2 mm). The Ni/n-Zn_0.5Cd_0.5Te/p-CdTe/Pt heterojunction has been effectively assembled. The front and back contact electrodes were made of two high-work-function metals (Pt and Ni) so that surface electrons may travel freely and be easily removed from the surface by the influence of the lowest energy falling on the solar cell. The dark (current-voltage) characteristics of fabricated heterojunctions have been reported at different temperatures ranging from 25 to 500 °C, as well as for voltages ranging from −2 to 2 V. Based on the dependence of the forward and reverse current on the voltage, the effective and main parameters connected to the fabricated diode have been determined. The rectification ratio, the junction resistance, an ideality factor of the fabricated diode, the shunt and series resistances, the height of the barrier formed at the interface between the Zn–Cd–Te thin films and the p-CdTe thin layer, the carrier recombination, the activation energy in the exhausted region, Poole-Frenkel, and Schottky coefficients were all evaluated.

本研究报道了 Zn _0.5 Cd _0.5 Te 薄膜的制备，该薄膜是通过常见的真空蒸发工艺在不同温度（25、100、200、300、400 和 500 °C）下制备的。在预先清洁的玻璃基板上，Zn _0.5 Cd _0.5形成薄膜。在本研究中，吸收系数用于分析线性光路。计算了所研究薄膜的光学参数、光学常数、介电常数、品质因数和色散参数。Swanepoel 提出的包络方法用于计算透明区域中所研究薄膜的折射率和厚度。在透射和反射光谱的强吸收区计算光能隙。随着被测系统的温度升高，折射率n, 减小而能隙增大。根据 X 射线衍射结果，退火薄膜具有立方相晶体结构，主要沿 (111) 面取向。所检测薄膜的晶体结构由 Zn _0.5 Cd _0.5 Te 薄膜在不同温度下的 SEM 剖面顶视图证实。在本工作的另一部分中，研究了通过在 ZnCdTe 上沉积p -CdTe 薄层（200 nm）制造的太阳能电池，研究了制备的n -Zn _0.5 Cd _0.5 Te/p-CdTe 太阳能电池的光伏特性在玻璃基板（2 mm）上制备的薄膜（~1000 nm）。Ni/n-Zn _0.5 Cd_0.5Te/p-CdTe/Pt 异质结已被有效组装。正面和背面接触电极由两种高功函数金属（Pt 和 Ni）制成，因此表面电子可以自由移动，并通过落在太阳能电池上的最低能量的影响轻松地从表面移除。已在 25 至 500 °C 的不同温度以及 -2 至 2 V 的电压范围内报道了制造的异质结的暗（电流 - 电压）特性。 基于正向和反向电流对电压，连接到制造的二极管的有效和主要参数已经确定。整流比、结电阻、制造二极管的理想因子、分流和串联电阻、p -CdTe 薄层、载流子复合、耗尽区的活化能、Poole-Frenkel 和肖特基系数都进行了评估。