Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing compatible with nanofabrication processes and device control used by the semiconductor industry. System scalability towards large-scale quantum networks demands integration into nanophotonic structures with efficient spin–photon interfaces. However, degradation of the spin-optical coherence after integration in nanophotonic structures has hindered the potential of most colour centre platforms. Here, we demonstrate the implantation of silicon vacancy centres (V_Si) in SiC without deterioration of their intrinsic spin-optical properties. In particular, we show nearly lifetime-limited photon emission and high spin-coherence times for single defects implanted in bulk as well as in nanophotonic waveguides created by reactive ion etching. Furthermore, we take advantage of the high spin-optical coherences of V_Si centres in waveguides to demonstrate controlled operations on nearby nuclear spin qubits, which is a crucial step towards fault-tolerant quantum information distribution based on cavity quantum electrodynamics.

碳化硅 (SiC) 中的光学可寻址自旋缺陷是一种新兴的量子信息处理平台，与半导体行业使用的纳米制造工艺和设备控制兼容。大规模量子网络的系统可扩展性需要集成到具有高效自旋-光子接口的纳米光子结构中。然而，在纳米光子结构中集成后自旋光学相干性的退化阻碍了大多数色心平台的潜力。在这里，我们展示了硅空位中心的注入（V _Si) 在 SiC 中，而不会破坏其固有的自旋光学特性。特别是，我们展示了对于大量注入的单个缺陷以及通过反应离子蚀刻创建的纳米光子波导，几乎是寿命有限的光子发射和高自旋相干时间。此外，我们利用波导中 V _Si中心的高自旋光学相干性来演示对附近核自旋量子位的受控操作，这是朝着基于腔量子电动力学的容错量子信息分布迈出的关键一步。