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Solution Processable Pentafluorophenyl End-Capped Dithienothiophene Organic Semiconductors for Hole-Transporting Organic Field Effect Transistors
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2021-11-16 , DOI: 10.1002/aelm.202100648
Arulmozhi Velusamy, Yung-Chi Yang, Chia-Chi Lin, Shakil N. Afraj, Kexing Jiang, Peng-Sheng Chen, Shueh-Lin Yau, Itaru Osaka, Shih-Huang Tung, Ming-Chou Chen, Cheng-Liang Liu

Two solution-processable organic semiconductors, DFPT-DTTR (1) and DFPbT-DTTR (2), composed of pentafluorophenyl (FP) end-capped 3,5-dialkyl dithienothiophene (DTTR) core with thiophene (T) or bithiophene (bT) as π-bridged spacers are developed and investigated for their optical, electrochemical, microstructural, and electrical properties. With more conjugated bithiophene units, compound 2 exhibits a red-shifted UV–vis absorption band and upshifted HOMO/downshifted LUMO energy levels. According to the density functional theory, compound 2 features a more twisted molecular structure due to the intrinsic non-coplanar blocks in the π-backbones. Compound 1-based organic field effect transistors exhibit efficient hole transport with mobility up to 0.48 cm2 V−1 s−1. This is one of the high mobility organic semiconductors exhibiting p-channel characteristics based on solution-processable small molecular FP end-capped fused/oligothiophenes. With large and interconnected crystalline morphologies, decreased π–π stacking distance, and less steric hindrance, compound 1 exhibits two orders of magnitude higher mobility than the more distorted 2, which exhibits lower hole mobility of 1.82 × 10−3 cm2 V−1 s−1.

中文翻译:

用于空穴传输有机场效应晶体管的可溶液加工的五氟苯基封端二噻吩并噻吩有机半导体

两种可溶液加工的有机半导体,DFPT-DTTR (1) 和 DFPbT-DTTR (2),由五氟苯基 (FP) 封端的 3,5-二烷基二噻吩噻吩 (DTTR) 核心与噻吩 (T) 或二噻吩 (bT) 组成由于 π 桥间隔物的光学、电化学、微观结构和电学特性被开发和研究。随着更多的共轭二噻吩单元,化合物 2 表现出红移的 UV-vis 吸收带和上移的 HOMO/下移的 LUMO 能级。根据密度泛函理论,由于 π 主链中固有的非共面嵌段,化合物 2 的分子结构更加扭曲。基于化合物1的有机场效应晶体管表现出高效的空穴传输,迁移率高达0.48 cm 2 V -1 s -1. 这是一种基于可溶液加工的小分子 FP 封端的稠合/低聚噻吩具有 p 沟道特性的高迁移率有机半导体。具有大且相互连接的晶体形态、减小的 π-π 堆叠距离和较小的空间位阻,化合物 1 的迁移率比畸变更大的 2 高两个数量级,后者的空穴迁移率较低,为 1.82 × 10 -3 cm 2 V -1 s -1
更新日期:2021-11-16
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