We describe 5 μm squircle InGaN-based red, green, and blue (RGB) monochromatic micro-light-emitting diodes (μLEDs) with an interpitch of 4 μm by pixilation of conductive p-GaN using a ${\mathrm{H}}_2$-plasma treatment. The p-GaN was passivated by ${\mathrm{H}}_2$ plasma and prevented the current’s injection into the InGaN quantum wells below. We observed that InGaN-based red μLEDs exhibited a broader full width at half-maximum and larger peak wavelength blueshift at $11.5–115\mathrm{A}/{\mathrm{cm}}^2$ than the green/blue μLEDs. The on-wafer light output power density of the red μLEDs at a wavelength of 632 nm at $115\mathrm{A}/{\mathrm{cm}}^2$ was approximately $936{\text{mW/}\mathrm{cm}}^2$, the highest value reported thus far for InGaN-based red μLEDs. This value was comparable with that of the green/blue μLEDs at $11.5\mathrm{A}/{\mathrm{cm}}^2$, indicating that the red μLEDs can satisfy the requirement of high brightness levels for specific displays. The color gamut based on InGaN RGB μLEDs covered 83.7% to 75.9% of the Rec. 2020 color space in the CIE 1931 diagram at 11.5 to $115\mathrm{A}/{\mathrm{cm}}^2$.

中文翻译：

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通过像素化导电 p-GaN 的超小和超密 InGaN 基 RGB 单色微发光二极管阵列

我们描述了间距为 4 μm 的 5 μm 方形 InGaN 基红色、绿色和蓝色 (RGB) 单色微发光二极管 (μLED)，通过使用 ${\mathrm{H}}_2$-等离子处理。p-GaN 被钝化${\mathrm{H}}_2$等离子体并防止电流注入下面的 InGaN 量子阱。我们观察到基于 InGaN 的红色 μLED 表现出更宽的半高全宽和更大的峰值波长蓝移$11.5–115\mathrm{一种}/{\mathrm{厘米}}^2$比绿色/蓝色μLED。波长为 632 nm 的红色 μLED 的晶圆上光输出功率密度$115\mathrm{一种}/{\mathrm{厘米}}^2$ 大约是 $936{\text{兆瓦/}\mathrm{厘米}}^2$，迄今为止报告的基于 InGaN 的红色 μLED 的最高值。该值与绿色/蓝色 μLED 的值相当$11.5\mathrm{一种}/{\mathrm{厘米}}^2$，表明红色 μLED 可以满足特定显示器的高亮度要求。基于 InGaN RGB μLED 的色域覆盖了 Rec. 的 83.7% 至 75.9%。CIE 1931 图中的 2020 色彩空间为 11.5 到$115\mathrm{一种}/{\mathrm{厘米}}^2$.