Monolithically combining silicon nitride (${{\rm{SiN}}_{\rm x}}$) photonics technology with III-V active devices could open a broad range of on-chip applications spanning a wide wavelength range of ${\sim}{{400 {-} 4000}}\;{\rm{nm}}$. With the development of nitride, arsenide, and antimonide lasers based on quantum well (QW) and quantum dot (QD) active regions, the wavelength palette of integrated III-V lasers on Si currently spans 400 nm to 11 µm, with a crucial gap in the red-wavelength regime of 630–750 nm. Here, we demonstrate red ${{\rm{In}}_{0.6}}{{\rm{Ga}}_{0.4}}\;{\rm{P}}$ QW and far-red InP QD lasers monolithically grown on CMOS-compatible Si (001) substrates with continuous-wave operation at room temperature. A low-threshold current density of ${{550}}\;{\rm{A}}/{{\rm{cm}}^2}$ and ${{690}}\;{\rm{A}}/{{\rm{cm}}^2}$ with emission at 680–730 nm was achieved for QW and QD lasers on Si, respectively. This work represents a step toward the integration of visible red lasers on Si, allowing the utilization of integrated photonics for applications including biophotonic sensing, quantum computing, and near-eye displays.

中文翻译：

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硅上的低阈值 InP 量子点和 InGaP 量子阱可见激光器 (001)

将氮化硅 ( ${{\rm{SiN}}}_{\rm x}}$ ) 光子技术与 III-V 族有源器件单片结合，可以开启广泛的片上应用，涵盖${\ sim}{{400 {-} 4000}}\;{\rm{nm}}$ . 随着基于量子阱 (QW) 和量子点 (QD) 有源区的氮化物、砷化物和锑化物激光器的发展，Si 上集成 III-V 激光器的波长调色板目前跨越 400 nm 至 11 µm，具有关键的差距在 630-750 nm 的红色波长范围内。在这里，我们展示了红色${{\rm{In}}_{0.6}}{{\rm{Ga}}_{0.4}}\;{\rm{P}}$ QW 和远红 InP QD 激光器在与 CMOS 兼容的 Si (001) 衬底上单片生长，在室温下具有连续波操作。低阈值电流密度${{550}}\;{\rm{A}}/{{\rm{cm}}^2}$和${{690}}\;{\rm{A}}/{{\rm{ cm}}^2}$的发射波长分别为 680-730 nm。这项工作代表了在 Si 上集成可见红色激光的一步，允许将集成光子学用于包括生物光子传感、量子计算和近眼显示在内的应用。