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Synthetic Three-DimensionalZ×Z2Topological Insulator in an Elastic Metacrystal
Physical Review Letters ( IF 8.1 ) Pub Date : 2021-11-17 , DOI: 10.1103/physrevlett.127.214302
Wei Wang 1 , Ze-Guo Chen 1 , Guancong Ma 1
Affiliation  

We report a three-dimensional (3D) topological insulator (TI) formed by stacking identical layers of Chern insulators in a hybrid real-synthetic space. By introducing staggered interlayer hopping that respects mirror symmetry, the bulk bands possess an additional Z2 topological invariant along the stacking dimension, which, together with the nontrivial Chern numbers, endows the system with a Z×Z2 topology. A 4-tuple topological index characterizes the system’s bulk bands. Consequently, two distinct types of topological surface modes (TSMs) are found localized on different surfaces. Type-I TSMs are gapless and are protected by Chern numbers, whereas type-II gapped TSMs are protected by Z2 bulk polarization in the stacking direction. Remarkably, each type-II TSM band is also topologically nontrivial, giving rise to second-order topological hinge modes (THMs). Both types of TSMs and the THMs are experimentally observed in an elastic metacrystal.

中文翻译:

弹性超晶中合成三维Z×Z2拓扑绝缘体

我们报告了一种三维 (3D) 拓扑绝缘体 (TI),它通过在混合真实合成空间中堆叠相同的陈绝缘体层而形成。通过引入尊重镜像对称的交错层间跳跃,体带具有额外的Z2 沿堆叠维度的拓扑不变量,连同非平凡陈数,赋予系统一个 Z×Z2拓扑。4 元组拓扑索引表征系统的体带。因此,发现两种不同类型的拓扑表面模式 (TSM) 位于不同的表面上。I 型 TSM 是无间隙的并受陈数保护,而 II 型有间隙 TSM 受陈数保护Z2堆叠方向的体极化。值得注意的是,每个 II 型 TSM 带在拓扑上也是非平凡的,从而产生了二阶拓扑铰链模式 (THM)。两种类型的 TSM 和 THM 都在弹性超晶中通过实验观察到。
更新日期:2021-11-17
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