Silicon solar cells are known to suffer from poor emitter performance that is seen as reduced external quantum efficiency at wavelengths below 500 nm. This is due to common tradeoff between electrical and optical performance. Here we demonstrate that no such tradeoff is needed when optimized boron implantation parameters are combined with non-reflective nanostructures and atomic layer deposited Al2O3 surface passivation. As a result, in our solar cells the external quantum efficiency actually increases with decreasing wavelength and reaches even above 100% at short wavelengths. This result indicates that carrier multiplication caused by absorption of high energy photons could be utilized for energy production in solar cells.

中文翻译：

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利用紫外光子在硅太阳能电池中实现载流子倍增


众所周知，硅太阳能电池的发射器性能较差，即波长低于 500 nm 时外部量子效率降低。这是由于电气和光学性能之间的常见权衡所致。在这里，我们证明，当优化的硼注入参数与非反射纳米结构和原子层沉积的 Al2O3 表面钝化相结合时，不需要这种权衡。因此，在我们的太阳能电池中，外部量子效率实际上随着波长的减小而增加，并且在短波长下甚至达到 100% 以上。这一结果表明，由高能光子吸收引起的载流子倍增可用于太阳能电池的能量生产。