This work reports a Pd/MoS2/Al2O3/CuO/ITO structure based dual band photodetector for UV and visible region. In the proposed photodetector, type II heterojunction is formed between n-type MoS2 and n-type CuO. The MoS2 and CuO layers are separated by a thin insulating layer of Al2O3 that helps in effectively suppressing the dark current. At −1 V bias voltage, the proposed photodetector depicts the responsivity, detectivity, and external quantum efficiency (EQE) as 2.55 A/W, 1×10131\times 10^{13} Jones, and 848% at 302 nm (with power 12.9μW12.9 \mu \text{W} /cm2) while the corresponding values at 608 nm (with power 135.5μW135.5 \mu \text{W} /cm2) are found to be 1.33 A/W, 5.13×10125.13\times 10^{12} Jones and 237 % respectively.

中文翻译：

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通过 Al2O3 分离的 MoS2/CuO 结进行低强度紫外光检测


这项工作报告了一种基于 Pd/MoS2/Al2O3/CuO/ITO 结构的紫外和可见光区域双波段光电探测器。在所提出的光电探测器中，n 型 MoS2 和 n 型 CuO 之间形成 II 型异质结。 MoS2 和 CuO 层被一层薄薄的 Al2O3 绝缘层隔开，有助于有效抑制暗电流。在−1 V偏置电压下，所提出的光电探测器将响应率、探测率和外部量子效率（EQE）描述为2.55 A/W，1×10131\times 10^{13} Jones，在302 nm处为848%（功率12.9μW12.9 \mu \text{W} /cm2) 而 608 nm 处的相应值（功率为 135.5μW135.5 \mu \text{W} /cm2）为 1.33 A/W，5.13×10125.13 \times 10^{12} Jones 和 237 % 分别。