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Releasable AlGaN/GaN 2D Electron Gas Heterostructure Membranes for Flexible Wide-Bandgap Electronics
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2021-11-11 , DOI: 10.1002/aelm.202100652 Yi‐Yu Zhang 1 , Shu An 1 , Yixiong Zheng 2 , Junyu Lai 2 , Jung‐Hun Seo 2 , Kwang Hong Lee 1 , Munho Kim 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2021-11-11 , DOI: 10.1002/aelm.202100652 Yi‐Yu Zhang 1 , Shu An 1 , Yixiong Zheng 2 , Junyu Lai 2 , Jung‐Hun Seo 2 , Kwang Hong Lee 1 , Munho Kim 1
Affiliation
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The development of transferrable free-standing semiconductor materials and their heterogeneous integration to arbitrary substrates open up new possibilities in improving device performance, exploring nonconventional manufacturing approaches, and offering a pathway to soft, conformal, and flexible electronics. In this work, flexible AlGaN/GaN high-electron mobility transistors (HEMTs) are demonstrated, which are transfer-printed from AlGaN/GaN on insulator to a flexible substrate using a novel releasing strategy based on the fast, facile, and reliable transfer process. Flexible AlGaN/GaN HEMTs possess good electrical performance such as the maximum saturated drain current density and transconductance of 110 mA mm−1 and 42.5 mS mm−1, respectively. Moreover, a significant piezoelectric behavior is observed when the device is under strain, resulting from the piezoelectric-induced polarization at the heterostructure interface. Owing to an additional strain-induced piezoelectric effect by the mechanical bending, the performance of AlGaN/GaN HEMT can be further improved. The results demonstrate that the device has great potential in applications for the next-generation flexible electronics, such as wearable systems, intelligent microinductor systems, and smart systems that can sense or feedback external mechanical stimuli.
中文翻译：
用于柔性宽带隙电子器件的可释放 AlGaN/GaN 2D 电子气体异质结构膜
可转移的独立半导体材料的发展及其与任意衬底的异质集成为提高器件性能、探索非常规制造方法以及提供通往软、保形和柔性电子产品的途径开辟了新的可能性。在这项工作中，展示了柔性 AlGaN/GaN 高电子迁移率晶体管 (HEMT)，该晶体管使用基于快速、简便和可靠转移工艺的新型释放策略从绝缘体上的 AlGaN/GaN 转移印刷到柔性基板上。 . 柔性 AlGaN/GaN HEMT 具有良好的电气性能，例如最大饱和漏极电流密度和 110 mA mm -1和 42.5 mS mm -1的跨导， 分别。此外，当器件处于应变状态时，观察到显着的压电行为，这是由异质结构界面处的压电诱导极化引起的。由于机械弯曲产生的额外应变诱导压电效应，AlGaN/GaN HEMT的性能可以进一步提高。结果表明，该器件在下一代柔性电子产品的应用中具有巨大潜力，例如可穿戴系统、智能微电感系统以及可以感知或反馈外部机械刺激的智能系统。
更新日期：2021-11-11
中文翻译：
用于柔性宽带隙电子器件的可释放 AlGaN/GaN 2D 电子气体异质结构膜
可转移的独立半导体材料的发展及其与任意衬底的异质集成为提高器件性能、探索非常规制造方法以及提供通往软、保形和柔性电子产品的途径开辟了新的可能性。在这项工作中，展示了柔性 AlGaN/GaN 高电子迁移率晶体管 (HEMT)，该晶体管使用基于快速、简便和可靠转移工艺的新型释放策略从绝缘体上的 AlGaN/GaN 转移印刷到柔性基板上。 . 柔性 AlGaN/GaN HEMT 具有良好的电气性能，例如最大饱和漏极电流密度和 110 mA mm -1和 42.5 mS mm -1的跨导， 分别。此外，当器件处于应变状态时，观察到显着的压电行为，这是由异质结构界面处的压电诱导极化引起的。由于机械弯曲产生的额外应变诱导压电效应，AlGaN/GaN HEMT的性能可以进一步提高。结果表明，该器件在下一代柔性电子产品的应用中具有巨大潜力，例如可穿戴系统、智能微电感系统以及可以感知或反馈外部机械刺激的智能系统。
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