We present a study on structure and ion emission behavior of copper ion-conducting solid electrolyte Rb₄Cu₁₆I₇Cl₁₃ prepared via mechano-chemical ball milling. The powder samples with varying milling time and rotation rate was studied. The room temperature ionic conductivity of Rb₄Cu₁₆I₇Cl₁₃ was approximately with σ_rt ∼ 0.213 S/cm. The SEM morphology of this solid electrolyte was studied, and the larger particle sizes was estimated to be 1.3 μm. The thermal property was examined by differential scanning calorimetry, revealing a melting temperature of 229.7 °C. In addition, the ability to generate Cu⁺ ion beams was also tested, and an ion current of 0.82 μA was obtained at 197 °C and 20 kV. It was observed that copper ions increase significantly with temperature and acceleration voltage. There is a good linear correlation between log(current) and the square root of the voltage, indicating that the emission current of copper ion from the tip of solid electrolyte abides by the Schottky model. A silicon sample was irradiated by the ion beam and copper nanoparticle were detected on the surface.

我们研究了机械化学球磨制备的铜离子导电固体电解质 Rb ₄ Cu ₁₆ I ₇ Cl _{13 的}结构和离子发射行为。研究了具有不同研磨时间和转速的粉末样品。Rb ₄ Cu ₁₆ I ₇ Cl ₁₃的室温离子电导率约为σ _rt～0.213 S/cm。研究了这种固体电解质的 SEM 形貌，估计较大的粒径为 1.3 μm。通过差示扫描量热法检查热性能，显示熔化温度为 229.7 °C。此外，生成铜的能力还测试了⁺离子束，在 197 °C 和 20 kV 下获得了 0.82 μA 的离子电流。观察到铜离子随温度和加速电压显着增加。log(current)与电压的平方根之间存在良好的线性相关性，说明固体电解质尖端的铜离子发射电流符合肖特基模型。硅样品被离子束照射并且在表面上检测到铜纳米颗粒。