Multilevel ferroelectric field−effect transistors (FeFETs) integrated with HfO₂−based ferroelectric thin films demonstrate tremendous potential in high−speed massive data storage and neuromorphic computing applications. However, few works have focused on the stability of the multiple memory states in the HfO₂−based FeFETs. Here we firstly report the write/read disturb effects on the multiple memory states in the Hf_0.5Zr_0.5O₂ (HZO)−based FeFETs. The multiple memory states in HZO−based FeFETs do not show obvious degradation with the write and read disturb cycles. Moreover, the retention characteristics of the intermediate memory states in HZO−based FeFETs with unsaturated ferroelectric polarizations are better than that of the memory state with saturated ferroelectric polarization. Through the deep analysis of the operation principle of in HZO−based FeFETs, we speculate that the better retention properties of intermediate memory states are determined by the less ferroelectric polarization degradation and the weaker ferroelectric polarization shielding. The experimental and theoretical evidences confirm that the long−term stability of the intermediate memory states in HZO−based FeFETs are as robust as that of the saturated memory state, laying a solid foundation for their practical applications.

_{与基于 HfO 2}的铁电薄膜集成的多级铁电场效应晶体管 (FeFET)在高速海量数据存储和神经形态计算应用中显示出巨大的潜力。_{然而，很少有工作关注基于 HfO 2}的 FeFET中多种存储状态的稳定性。_{在这里，我们首先报告了 Hf 0.5} Zr _0.5 O ₂中多个内存状态的写/读干扰效应(HZO)-基 FeFET。基于 HZO 的 FeFET 中的多个存储器状态没有显示出随着写入和读取干扰周期的明显退化。此外，在具有不饱和铁电极化的 HZO 基 FeFET 中，中间存储状态的保持特性优于具有饱和铁电极化的存储状态。通过深入分析基于 HZO 的 FeFET 的工作原理，我们推测中间存储状态的更好保留特性是由较少的铁电极化退化和较弱的铁电极化屏蔽决定的。实验和理论证据证​​实，基于 HZO 的 FeFET 中的中间记忆状态的长期稳定性与饱和记忆状态的稳定性一样强，