The thickness-dependent strain-relaxation behavior and the associated impacts upon the magnetic, electric properties and magnetoelectric coupling effect for the highly c-axis oriented BiFeO₃ (BFO) film films grown on (0 0 1) oriented Si substrate were studied. The result shown that the value of remnant polarization and coercive field were suppressed as the strain relaxes with increasing thickness. The BFO films also presented typical weak ferromagnetic hysteresis loops with a low coercive field and small remnant magnetization, and the saturated magnetization and remnant magnetization decreasing with increasing film thickness. The room temperature dynamic magnetoelectric coupling was approved by the transverse magnetoelectric voltage coefficients, which also decreased with strain relaxation due to the increase of thickness, and the maximum was around 265 mV/cm.Oe when the film thickness is 50 nm.

从属厚度应变松弛行为并且在磁，电特性和对面向所述的BiFeO高度c轴磁电耦合效应相关联的影响₃（BFO）膜的膜生长在（0  0 1) 对取向硅衬底进行了研究。结果表明，随着应变随厚度的增加而松弛，残余极化和矫顽场的值受到抑制。BFO薄膜还呈现出典型的弱铁磁磁滞回线，矫顽场低，剩磁小，饱和磁化强度和剩磁强度随着薄膜厚度的增加而减小。室温动态磁电耦合得到横向磁电电压系数的认可，随着厚度的增加，该系数也随着应变弛豫而减小，当薄膜厚度为50 nm时，最大值约为265  mV/cm.Oe。