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Strengthening and Weakening by Dislocations in Monolayer MoS2
Chemistry of Materials ( IF 7.2 ) Pub Date : 2021-11-08 , DOI: 10.1021/acs.chemmater.1c02797
Li Yang 1 , Jinjie Liu 1 , Yanwen Lin 1 , Ke Xu 1 , Xuezheng Cao 1 , Zhisen Zhang 1 , Jianyang Wu 1, 2
Affiliation  

Dislocations govern the properties of crystals. Yet, how pentagon–heptagon (5|7) pairs in grain boundaries (GBs) affect the mechanical properties of MoS2 remains poorly known. Using atomistic simulations and the continuum disclination dipole model, we show that depending on the tilt angle and 5|7 dislocation arrangement, MoS2 GB strength can be enhanced or reduced with the tilt angle. For zigzag-tilt GBs primarily composed of Mo5|7 + S5|7 dislocations, GB strength monotonically increases as the square of the tilt angle. For armchair-tilt GBs with Mo5|7 or S5|7 dislocations, however, the trend of GB strength breaks down, as dislocations are unevenly spaced. Moreover, mechanical failure initiates at the bond shared by 5|7 rings, in contrast to graphene in which failure occurs at the bond shared by 6|7 rings. This work provides new insights into the mechanical design of synthetic transition metal dichalcogenide crystals via dislocation engineering.

中文翻译:

单层二硫化钼中位错的强化和弱化

位错决定了晶体的性质。然而,晶界 (GB) 中的五边形-七边形 (5|7) 对如何影响 MoS 2的机械性能仍然知之甚少。使用原子模拟和连续向错偶极子模型,我们表明,根据倾斜角和 5|7 位错排列,MoS 2GB 强度可随倾斜角度增强或减弱。对于主要由 Mo5|7 + S5|7 位错组成的锯齿形倾斜 GB,GB 强度随着倾斜角的平方单调增加。然而,对于具有 Mo5|7 或 S5|7 位错的扶手椅倾斜 GB,GB 强度的趋势打破了,因为位错间隔不均匀。此外,机械失效始于 5|7 环共享的键,与石墨烯相反,失效发生在 6|7 环共享的键上。这项工作为通过位错工程合成过渡金属二硫属化物晶体的机械设计提供了新的见解。
更新日期:2021-11-23
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