Sn/Er co-doped SiO2 (SiO2-Sn-Er2Si2O7) thin-film based light-emitting diodes (LEDs) have been successfully fabricated by using the sol-gel method, which show an excellent Er3+ electroluminescence (EL) at 1.54 μm\mu \text{m} . Under forward bias, the electroluminescence ranges from visible to near-infrared region has been observed. The EL intensity is enhanced by ~45 times at 1.54 μm\mu \text{m} for device with Sn content of 70 mol% compared with the reference device with 50 mol% Sn content. The significant enhancement in EL can be attributed to improved electrical conductivity of Sn/Er co-doped SiO2 thin films and the better crystallization of erbium silicate nanocrystals. Moreover, the onset voltages of LEDs show an obvious reduction by increasing Sn contents and the lowest onset voltage is about ~12.7 V when the Sn proportion is 70 mol%. Our present work shows a new method to fabricate silicon-based LEDs and a promising potential to boost silicon-based light source towards practical application.

中文翻译：

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通过控制 Sn 含量增强 Sn/Er 共掺杂 SiO2 薄膜的电致发光


采用溶胶-凝胶法成功制备了 Sn/Er 共掺杂 SiO2 (SiO2-Sn-Er2Si2O7) 薄膜发光二极管 (LED)，在 1.54 μm 处表现出优异的 Er3+ 电致发光 (EL)。 mu \text{m} 。在正向偏压下，观察到电致发光范围从可见光到近红外区域。与 Sn 含量为 50 mol% 的参考器件相比，Sn 含量为 70 mol% 的器件在 1.54 μm\mu \text{m} 下的 EL 强度增强了约 45 倍。 EL 的显着增强可归因于 Sn/Er 共掺杂 SiO2 薄膜电导率的提高和硅酸铒纳米晶体更好的结晶。此外，随着Sn含量的增加，LED的起始电压明显降低，当Sn比例为70 mol%时，最低起始电压约为12.7 V。我们目前的工作展示了一种制造硅基 LED 的新方法，以及推动硅基光源走向实际应用的巨大潜力。