Two-dimensional (2D) MoS2 was grown on AlGaN(GaN) substrates by chemical vapor deposition (CVD) and 2D-3D MoS2-AlGaN(GaN) heterostructures were formed. The MoS2 crystal on AlGaN surface has a mixed and irregular shape including single and multiple layers, while the single layer of triangular MoS2 is basically prepared on GaN surface. Combined with theoretical first-principles analysis, it is found the adsorption of AlGaN to MoS2 is lower than that of GaN, which leads to the deposition of MoS2 molecules on AlGaN surface, forming multilayer shapes. In addition, Both the MoS2-AlGaN(GaN) heterostructures exhibit indirect band gaps and broad-band light absorption performances.

中文翻译：

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深入了解 CVD 方法在 AlGaN(GaN) 衬底上生长的二维 MoS2


通过化学气相沉积（CVD）在AlGaN（GaN）衬底上生长二维（2D）MoS2，并形成2D-3D MoS2-AlGaN（GaN）异质结构。 AlGaN表面的MoS2晶体具有混合的、不规则的形状，包括单层和多层，而GaN表面上基本上制备的是单层三角形MoS2。结合理论第一性原理分析，发现AlGaN对MoS2的吸附低于GaN，这导致MoS2分子在AlGaN表面沉积，形成多层形状。此外，MoS2-AlGaN(GaN)异质结构均表现出间接带隙和宽带光吸收性能。