Strontium silicate phosphors were synthesized via a solid-state route with different silicon sources as SiO₂ and Si₃N₄. The phosphors synthesized with Si₃N₄ exhibited improved luminescence properties for white emission because of the coexistence of Sr₃MgSi₂O₈ and Sr₂SiO₄ phases. Under UV excitation, white light was observed due to the combination of blue emission from Sr₃MgSi₂O₈: Eu²⁺ and yellow emission from Sr₂SiO₄: Eu²⁺. The broad Eu²⁺ emission was explained on the basis of the dependency of crystal field strength on the site selection. The variation of Eu²⁺ ion concentration controlled the quality of the emitted light and at 5 mol% Eu²⁺, near white emission (0.30, 0.31) was obtained with external and internal quantum efficiencies of 50% and 68%, respectively. The WLEDs were fabricated by coating the present phosphors on an InGaN UV- LED chips and the EL spectrum displayed near white chromaticity (0.31, 0.33) with color rendering index of 80 and CCT of 6850 K. The results demonstrated the promising single host phosphors for near-UV white-light-emitting diodes.

硅酸锶磷光体是通过固态途径与不同的硅源如 SiO ₂和 Si ₃ N ₄合成的。由于Sr ₃ MgSi ₂ O ₈和Sr ₂ SiO ₄相的共存，用Si ₃ N ₄合成的磷光体表现出改善的白光发射发光特性。在紫外激发下，由于 Sr ₃ MgSi ₂ O ₈ : Eu ^{2+ 的}蓝色发射和 Sr ₂ SiO ₄ : Eu 的黄色发射的结合，观察到白光²⁺。基于晶体场强对位点选择的依赖性解释了宽 Eu ²⁺发射。Eu ²⁺离子浓度的变化控制了发射光的质量，在 5 mol% Eu ^{2+ 下}，获得了近白色发射 (0.30, 0.31)，外量子效率和内量子效率分别为 50% 和 68%。WLED 是通过在 InGaN UV-LED 芯片上涂覆本发明的磷光体来制造的，EL 光谱显示接近白色的色度 (0.31, 0.33)，显色指数为 80，CCT 为 6850 K。结果证明了有前途的单一主体磷光体用于近紫外白光发光二极管。