Defect absence─the high-energy radiation has no effect on the HaP. DT─the radiation creates defects, but these do not harm the HaP measurably. SH─the HaP is damaged, but the damage is rapidly self-repaired. ^aExcess defects (beyond those present at equilibrium), caused by radiation damage, are eliminated by SH and accumulated in the case of DT. The middle box corresponds to equilibrium, defects are illustrated by gray dots, and irradiation is illustrated by red arrows. ^aExcess defects (beyond those present at equilibrium), caused by radiation damage, are eliminated by SH and accumulated in the case of DT. The middle box corresponds to equilibrium, defects are illustrated by gray dots, and irradiation is illustrated by red arrows. Figure 1. (Top) Scheme of (left) tension-induced crack formation and (right) crack-healing after compression, for HaP films on flexible ITO/PET (polyethylene terephthalate) substrate. (Bottom) SEM images of HaP (MAPbI₃) thin films: (left) original surface, (middle) after crack formation, and (right) after mechanical healing during compression. Red arrows in the middle image point to cracks. For further details see the original paper by Yadavalli et al. Reproduced with permission from ref (76). Copyright 2000 Elsevier. Views expressed in this Viewpoint are those of the authors and not necessarily the views of the ACS. G.H. and D.C. thank the Yotam project and the CNRS-Weizmann program for support. L.K. and D.C. thank the Minerva Centre for Self-Repairing Systems for Energy & Sustainability for support. L.K. thanks the Mintzi and Aryeh Katzman Professorial Chair and the Helen and Martin Kimmel Award for Innovative Investigation. This article references 89 other publications.

中文翻译：

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卤化铅钙钛矿中的缺陷是否可以治愈、可以容忍，还是两者兼而有之？

缺陷缺失——高能辐射对 HaP 没有影响。DT─辐射会产生缺陷，但这些缺陷不会对 HaP 造成可衡量的损害。SH─HaP 损坏，但损坏会迅速自我修复。^a由辐射损伤引起^的过量缺陷（超出平衡时的缺陷）被 SH 消除并在 DT 的情况下累积。中间框对应于平衡，缺陷用灰色点表示，辐射用红色箭头表示。^a由辐射损伤引起^的过量缺陷（超出平衡时的缺陷）被 SH 消除并在 DT 的情况下累积。中间框对应于平衡，缺陷用灰色点表示，辐射用红色箭头表示。图 1.（左）的（上）方案）拉伸诱导裂纹形成和（右）压缩后裂纹愈合，用于柔性 ITO/PET（聚对苯二甲酸乙二醇酯）基板上的 HaP 薄膜。（下）HaP（MAPbI ₃）薄膜的SEM图像：（左）原始表面，（中）裂纹形成后，（右）) 在压缩过程中机械愈合后。中间图像中的红色箭头指向裂缝。有关更多详细信息，请参阅 Yadavalli 等人的原始论文。经参考文献 (76) 许可转载。版权所有 2000 Elsevier。本观点中表达的观点是作者的观点，不一定是 ACS 的观点。GH 和 DC 感谢 Yotam 项目和 CNRS-Weizmann 计划的支持。LK 和 DC 感谢 Minerva 能源与可持续性自我修复系统中心的支持。LK 感谢 Mintzi 和 Aryeh Katzman 教授席以及 Helen 和 Martin Kimmel 创新调查奖。本文引用了 89 篇其他出版物。