当前位置: X-MOL 学术Nature › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Strongly correlated excitonic insulator in atomic double layers
Nature ( IF 50.5 ) Pub Date : 2021-10-27 , DOI: 10.1038/s41586-021-03947-9
Liguo Ma 1 , Phuong X Nguyen 1 , Zefang Wang 1 , Yongxin Zeng 2 , Kenji Watanabe 3 , Takashi Taniguchi 3 , Allan H MacDonald 2 , Kin Fai Mak 1, 4, 5 , Jie Shan 1, 4, 5
Affiliation  

Excitonic insulators (EIs) arise from the formation of bound electron–hole pairs (excitons)1,2 in semiconductors and provide a solid-state platform for quantum many-boson physics3,4,5,6,7,8. Strong exciton–exciton repulsion is expected to stabilize condensed superfluid and crystalline phases by suppressing both density and phase fluctuations8,9,10,11. Although spectroscopic signatures of EIs have been reported6,12,13,14, conclusive evidence for strongly correlated EI states has remained elusive. Here we demonstrate a strongly correlated two-dimensional (2D) EI ground state formed in transition metal dichalcogenide (TMD) semiconductor double layers. A quasi-equilibrium spatially indirect exciton fluid is created when the bias voltage applied between the two electrically isolated TMD layers is tuned to a range that populates bound electron–hole pairs, but not free electrons or holes15,16,17. Capacitance measurements show that the fluid is exciton-compressible but charge-incompressible—direct thermodynamic evidence of the EI. The fluid is also strongly correlated with a dimensionless exciton coupling constant exceeding 10. We construct an exciton phase diagram that reveals both the Mott transition and interaction-stabilized quasi-condensation. Our experiment paves the path for realizing exotic quantum phases of excitons8, as well as multi-terminal exciton circuitry for applications18,19,20.



中文翻译:

原子双层中的强相关激子绝缘体

激子绝缘体 (EI) 源于半导体中束缚电子-空穴对(激子)1,2的形成,并为量子多玻色子物理学3,4,5,6,7,8提供了一个固态平台。预计强激子-激子排斥会通过抑制密度和相波动8,9,10,11来稳定凝聚的超流体和晶相。尽管已经报道了 EI 的光谱特征6,12,13,14, 强相关 EI 状态的确凿证据仍然难以捉摸。在这里,我们展示了在过渡金属二硫化物 (TMD) 半导体双层中形成的强相关二维 (2D) EI 基态。当两个电隔离 TMD 层之间施加的偏置电压被调谐到填充束缚电子-空穴对但不填充自由电子或空穴的范围时,会产生准平衡空间间接激子流体15,16,17. 电容测量表明流体是激子可压缩的但电荷不可压缩——EI 的直接热力学证据。流体还与超过 10 的无量纲激子耦合常数密切相关。我们构建了一个激子相图,揭示了莫特转变和相互作用稳定的准凝聚。我们的实验为实现激子8的奇异量子相以及应用18,19,20的多端激子电路铺平了道路。

更新日期:2021-10-27
down
wechat
bug